Allicdata Part #: | IXTQ60N20L2-ND |
Manufacturer Part#: |
IXTQ60N20L2 |
Price: | $ 10.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 60A TO-3P |
More Detail: | N-Channel 200V 60A (Tc) 540W (Tc) Through Hole TO-... |
DataSheet: | IXTQ60N20L2 Datasheet/PDF |
Quantity: | 58 |
1 +: | $ 9.40590 |
30 +: | $ 7.90797 |
120 +: | $ 7.26677 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 255nC @ 10V |
Series: | Linear L2™ |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ60N20L2 is one of the most commonly used power MOSFETs (metal oxide semiconductor field-effect transistors). It is a lateral channel device with a single-ended gate, meaning that a single voltage applied to the gate will produce a current through the channel. A key feature of IXTQ60N20L2 is its extremely low on-state resistance which allows it to dissipate more heat than traditional MOSFETs. This makes it ideal for high power applications such as power amplifiers and power supplies.
IXTQ60N20L2 transistors are widely used in various industries and applications. Many of the portable electronic devices, such as smartphones and computers, rely on IXTQ60N20L2 transistors to regulate their power. According to Texas Instruments, IXTQ60N20L2 transistors are also widely used in LED lighting, motor control, and even automotive industries. One of the main advantages of IXTQ60N20L2 transistors is their ability to operate at high temperatures.
The working principle of IXTQ60N20L2 transistors is based on the principle of operation of MOSFETs. When voltage is applied to the gate, a depletion layer forms around the drain and source regions. This depletion layer reduces the conductivity of the channel and the current carrying capacity of the transistor. When the gate voltage is increased further, the depletion layer can no longer manage to reduce the conductivity of the channel and thus the transistor starts to conduct.
The IXTQ60N20L2 transistors are digital-logic-level MOSFETs, meaning that the gate source voltage expected to be same as the threshold voltage of the device within the entire operation range. In other words, the gate voltage should always remain lower than the threshold voltage. If the gate voltage goes higher than the threshold voltage, the device will not function.
IXTQ60N20L2 transistors have a maximum drain current rating of 60A and a drain-source voltage rating of 20V. The maximum power dissipation rating is 80W and the typical threshold voltage is 2V. The transistors have a low on-state resistance and high switching speeds. They also have excellent thermal performance, making them suitable for use in a wide range of applications.
In conclusion, the IXTQ60N20L2 transistor is an excellent device for high power applications. It has a low on-state resistance and high switching speeds, allowing it to dissipate more heat than traditional MOSFETs. It is widely used in the automotive, LED lighting, and motor control industries due to its ability to operate at high temperatures and its excellent thermal performance. The working principle of IXTQ60N20L2 transistors is based on the principle of operation of MOSFETs, with the gate source voltage expected to remain lower than the threshold voltage of the device.
The specific data is subject to PDF, and the above content is for reference
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IXTQ180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-3... |
IXTQ182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-3... |
IXTQ200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-3... |
IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
IXTQ230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-3... |
IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
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