| Allicdata Part #: | IXTH2N150L-ND |
| Manufacturer Part#: |
IXTH2N150L |
| Price: | $ 7.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1500V 2A TO-247 |
| More Detail: | N-Channel 1500V 2A (Tc) 290W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH2N150L Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 6.59440 |
| Vgs(th) (Max) @ Id: | 8.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 290W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 20V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 15 Ohm @ 1A, 20V |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 1500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH2N150L can be classified under transistors, field-effect transistors (FETS), and single MOSFETs. It is a high breakdown voltage, low on-resistance, N-channel, enhancement-mode MOSFET usually used as a power-switching control. As well as other power MOSFETS, the IXTH2N150L has a gate-to-source voltage VGS threshold that must be exceeded before it passes current. This MOSFET offers a true logic-level threshold, making it suitable for general gate drive operations.
The IXTH2N150L is an N-Channel MOSFET that operates from -55 degrees Celsius to + 175 degrees Celsius and features low “on” resistance values of 150 mΩ and breakdown voltages of 100 volts. It is a robust and reliable device suitable for high power applications such as power switching, motor control, and other power control tasks. It is also used in many consumer and industrial equipment.
When the MOSFET is in the enhancement mode, the source is pulled towards the drain when the voltage applied to the gate is above the VGS threshold. This turns the MOSFET on and reduces its on-resistance and allows current to flow through it. The IXTH2N150L\'s logic level threshold makes it desirable in gate drive applications where high speed switching and accurate VGS thresholds are required.
The IXTH2N150L can be used as an electronic switch in a variety of applications such as high-power switching, motor controllers, IGBT and DC-DC converters, and other power control applications. It is also used as a medium and high-power driver in many consumer goods. Besides, it can also be used in power management, as well as in audio power amplifiers, telecommunications, instrumentation, and military applications.
The IXTH2N150L is an effective power control device in many applications because of its high voltage and low on-resistance. Its logic level threshold is particularly useful for high-speed switching and precise VGS threshold. This MOSFET is a reliable device suitable for numerous electrical and electronic applications.
The specific data is subject to PDF, and the above content is for reference
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