IXTT110N10L2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	600W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	260nC @ 10V
Series:	Linear L2™
Rds On (Max) @ Id, Vgs:	18 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

A IXTT110N10L2 application field is that of a N-Channel enhancement mode field effect transistor (FET). It is a high-side power switching device made available in a variety of packages including the PowerPAK SO-8. This device is commonly used in applications such as motor controls, power management circuits, and load switching circuits.

IXTT110N10L2 Features and Benefits

The IXTT110N10L2 are manufactured using advanced trench MOSFET process technology that ensures superior RDS(on) performance. This translates to significantly lower losses, improved load and line regulation, and superior overall efficiency. This is an attractive product offering for power management applications, as the device offers higher efficiency than competing solutions in the same power range.The IXTT110N10L2 include additional features for improved device robustness and user safety. These include built-in current sensing, under-voltage lockout, short circuit protection, over-temperature protection, and built-in thermal shutdown protection. Thanks to these features, the IXTT110N10L2 provides reliable operation even in harsh operating environments.

IXTT110N10L2 Working Principle

The IXTT110N10L2 is a N-channel enhancement mode FET that uses an ohmic contact to connect a source and drain terminal. This source/drain contact can then be modulated by a gate voltage that allows a flow of current, or blocks it. When the gate voltage is equal to the source voltage, the FET remains off and no current flows. Increasing the gate voltage positively will cause the FET to turn on, allowing a current to flow from source to drain.The IXTT110N10L2 is designed to operate in high-side applications, meaning the source terminal is connected to the highest potential. This allows the IXTT110N10L2 to act as a switch for high voltage applications. When the IXTT110N10L2 is on, positive current will flow from source to drain and when off, no current will flow.

Conclusion

The IXTT110N10L2 is a high-side power switching device that is well-suited for a variety of applications. Thanks to its advanced processing and built-in protection features, the IXTT110N10L2 is a reliable device for use in demanding applications. Its N-Channel enhancement mode FET design makes it the perfect choice for power management, motor controls and load switching circuits.

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