IXTH80N075L2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	357W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	103nC @ 10V
Series:	Linear L2™
Rds On (Max) @ Id, Vgs:	24 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTH80N075L2 is a highly popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) made by Infineon Technologies, an integrated circuit manufacturer based in Germany. It is a 75V, N-channel device which is optimized for use as a load switch or in other applications requiring a high current/voltage rating. This article will delve into the application fields and working principles of the IXTH80N075L2.The IXTH80N075L2 is best suited for a wide range of applications, including load switch, power distribution, automotive, audio/video, and many other power management functions. With its low on-state resistance (RDS(on)) and high-temperature rating of 175°C, it is ideal for applications that require fast switching speeds and high current/voltage ratings.The IXTH80N075L2’s application fields are far reaching; it can be employed in numerous end applications, and its built-in protection features make it suitable for use in a variety of automotive, industrial, and consumer-electronics products. For example, it can be utilized in power converters and controllers, intelligent lighting, or motor control applications.In terms of operation, the IXTH80N075L2 is designed with a voltage-controlled gate to allow current flow through the MOSFET when the gate voltage reaches the threshold voltage. As the gate voltage rises, the drain current will increase exponentially, and the drain-to-source voltage will fall. When the voltage of the gate reaches the threshold voltage, the drain-source current will reach its maximum.The IXTH80N075L2 is an excellent choice for power conservation applications due to its low on-state resistance and its ability to operate in an ultra-low-power mode. Its low on-state resistance ensures that it can switch between a low-current and a high-current state quickly, allowing for efficient operation. Furthermore, the IXTH80N075L2 has built-in isolation and protection features that protect the MOSFET from overvoltage or overcurrent.The IXTH80N075L2 is an excellent choice for applications that require a high current/voltage rating, fast switching speeds, and protection from overvoltage or overcurrent. It is available in a wide range of packages and can be used in a variety of applications, including power converters, motor control, and intelligent lighting. Its low on-state resistance and ultra-low-power mode make it ideal for power conservation applications, and its built-in protection features further ensure its reliability and robustness.

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