Allicdata Part #: | ZXM66N03N8DKR-ND |
Manufacturer Part#: |
ZXM66N03N8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 9A 8-SOIC |
More Detail: | N-Channel 30V 9A (Ta) 2.5W (Ta) Surface Mount 8-SO |
DataSheet: | ZXM66N03N8TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Digi-Reel® |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The ZXM66N03N8TA is a power MOSFET (Metal Oxide Silicon Field Effect Transistor) manufactured by Zetex. It is a single source N-Channel enhancement mode MOSFET constructed with a vertical DMOS technology and optimized to provide efficient power handling with ultra-low ON-state resistance (RDS(ON)).
Application Field
These devices are mainly used in motor control applications, synchronous buck converters, sales converters and other DC/DC converters. They can also be employed in power management for battery powered applications in portable devices such as cellular phones, digital cameras and notebooks. Additionally, it can also be used in power switching applications as an ideal replacement of bipolar transistors, as well as in high frequency circuit because of its fast switching.
Working Principle
The basic principle of operation of the ZXM66N03N8TA MOSFET is based on the principle of input impedance. Essentially, the gate-to-source terminal in MOSFETs acts as a capacitor and exhibits input impedance. When a voltage is applied to this gate-to-source terminal, it creates an electric field that modulates the drain-to-source current and results in an amplifying action.
When the applied gate-to-source voltage (VGS) is below the threshold voltage (VGS(th)) the MOSFET is said to be in cut–off mode, where its resistance RDS(ON) is very high and nearly zero current passes through the device. Conversely, when the applied VGS is more than the threshold voltage, the MOSFET is said to be in enhancement mode and its RDS(ON) decreases resulting in a relatively large current flow.
The Zetex ZXM66N03N8TA is an N-Channel MOSFET that has an RDS(ON) of only 0.18 Ω giving it unparalleled efficiency for optimal power handling and fast switching. With a maximum drain current capability of 30 A and maximum drain-source voltage rating of 30 V, it can handle up to 540 W of power with ease, making it perfect for motor control, synchronous buck converter, or other power management operated applications. Additionally, it has a maximum power dissipation of 2.7 W.
Conclusion
The Zetex ZXM66N03N8TA is a single source N-Channel enhancement mode MOSFET which is optimised to provide efficient power handling with ultra-low ON-state resistance. With its maximum drain current capability of 30 A and maximum drain-source voltage rating of 30 V, it offers unparalleled efficiency, making it extremely suitable for motor control, synchronous buck converters, or other power management operated applications.
The specific data is subject to PDF, and the above content is for reference
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