
Allicdata Part #: | IXTP80N075L2-ND |
Manufacturer Part#: |
IXTP80N075L2 |
Price: | $ 4.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 80A TO-220 |
More Detail: | N-Channel 75V 80A (Tc) 357W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 53 |
1 +: | $ 4.22100 |
50 +: | $ 3.39066 |
100 +: | $ 3.08927 |
500 +: | $ 2.50155 |
1000 +: | $ 2.10974 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 357W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
Series: | Linear L2™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP80N075L2 is a power field effect device with a high current rating and superior thermal performance. It is classified as a single gate MOSFET, meaning it consists of a single voltage controlling current. The IXTP80N075L2 is designed to handle high power applications such as motor control, battery management, and other high power applications. Its single gate design gives it an advantage over other FETs, as it can switch faster and more reliably than other FETs with multiple gates.
As with all FETs and MOSFETs, the IXTP80N075L2 is based on the basic principles of electrical conductivity and semiconductor physics. A semiconductor is a material with a resistivity between metal and insulators, making them suitable for creating electrical devices such as FETs and MOSFETs. In the IXTP80N075L2, the source, drain, and gate are equally important for it to work as intended. When a current is applied to the gate, electrons will flow between the source and drain, creating a switch that can be used in a variety of applications.
The IXTP80N075L2 is designed to provide high current performance while maintaining low power operation. Its low Rds(on) value (3.3 milliohms) ensures fast switching performance while its robust temperature capability ensures reliable operation under harsh conditions. The IXTP80N075L2 is designed to survive temperature shocks in excess of 175C and can handle overloads of up to 40A. Its higher output current capability allows it to be used in a variety of high power applications such as automotive, industrial, medical, and consumer applications.
The IXTP80N075L2 has a variety of features that make it highly suitable for use in such high power applications. Its single gate design allows for fast switching, making it ideal for motor control. Its junction temperature is rated at 175C and its rated power dissipation is 3W, making it capable of handling large amounts of current without producing excessive heat. The IXTP80N075L2 also has an integrated current sense feature which enables it to monitor the current flow within the device, helping to prevent its destruction through overloading.
In conclusion, the IXTP80N075L2 is a single gate MOSFET designed to provide high current operation while maintaining low power operation. It is designed to survive temperature shocks in excess of 175C and can handle overloads of up to 40A, making it ideal for use in a variety of high power applications such as automotive, industrial, medical, and consumer applications. The IXTP80N075L2 also offers a wide range of features such as fast switching performance and integrated current sensing that make it a highly versatile and reliable power FET.
The specific data is subject to PDF, and the above content is for reference
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