Allicdata Part #: | IXTT40N50L2-ND |
Manufacturer Part#: |
IXTT40N50L2 |
Price: | $ 11.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 40A TO-268 |
More Detail: | N-Channel 500V 40A (Tc) 540W (Tc) Surface Mount TO... |
DataSheet: | IXTT40N50L2 Datasheet/PDF |
Quantity: | 86 |
1 +: | $ 10.43910 |
30 +: | $ 8.77905 |
120 +: | $ 8.06736 |
Series: | Linear L2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 320nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 540W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT40N50L2 is a Field Effect Transistor (FET) optimised for high-speed switching applications. As part of the FET family of transistors, it utilises a thin-oxide layer of semiconductor material to switch current between source and drain terminals. As a single FET, the IXTT40N50L2 can be used in various configurations, such as high-side, low-side, and bi-directional switch networks. In addition to its high-speed capability, the IXTT40N50L2 also offers excellent on-state resistance, low gate-drive voltage, and low input capacitance, making it suitable for a wide range of control applications.
The IXTT40N50L2 is a surface-mounted device (SMD) MOSFET packaged in a low-profile DFN1010X250-6 package, with a lead free (RoHS) compliant construction. It has a maximum drain source voltage rating of 500V, which makes it suitable for use in high voltage switching applications. Furthermore, it can handle high power switching within a 50V-150V range, making it an ideal device for DC-DC converter, motor drive, and other power control systems.
The working principle of the IXTT40N50L2 is based on the construction of the FET and its ability to act as a controlled switch in an electrical circuit. It consists of a thin-film layer of semiconductor material built on a dielectric substrate between two terminal contacts – the source and the drain. A control gate is then connected to the semiconductor between the two terminals, allowing for a change in electrical resistance between the two terminals by applying a voltage to the gate. When the gate voltage is greater than the threshold voltage, a channel is formed allowing current to flow from the source to the drain. This concept is the fundamental working principle of the IXTT40N50L2.
The designed applications of the IXTT40N50L2 are seen across a wide variety of industries, ranging from automotive to industrial to consumer electronics. It is primarily used in high-speed switching circuits, such as DC-DC converters, motor drive circuits, energizing and de-energizing of relays, and waveform-shaping applications. In the automotive industry it is used in inverter controls, battery management systems, and a variety of other applications requiring high-speed and high-efficiency power switching. In the industrial sector, it is used in motor control systems, actuation systems, and HVAC systems. In the home entertainment space, it is also used in audio amplifiers.
In summary, the IXTT40N50L2 is a high-speed FET-type transistor, optimised for high voltage and power switching applications. It offers excellent on-state resistance, low gate-drive voltage, and low input capacitance, making it suitable for a wide range of control applications. The IXTT40N50L2 is utilized in automotive, industrial and consumer applications, such as DC-DC converters, motor drives, energizing and de-energizing of relays, waveform-shaping, inverter controls, and audio amplifiers. Overall, the IXTT40N50L2 is an ideal solution for today\'s high-speed switching needs.
The specific data is subject to PDF, and the above content is for reference
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