| Allicdata Part #: | IXTT75N10L2-ND |
| Manufacturer Part#: |
IXTT75N10L2 |
| Price: | $ 9.73 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 75A TO268 |
| More Detail: | N-Channel 100V 75A (Tc) 400W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT75N10L2 Datasheet/PDF |
| Quantity: | 116 |
| 1 +: | $ 8.84520 |
| 30 +: | $ 7.43883 |
| 120 +: | $ 6.83569 |
| 510 +: | $ 5.83042 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8100pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 215nC @ 10V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT75N10L2 is a high-performance, P-Channel enhancement-mode field-effect transistor (FET) for efficient power management applications. The IXTT75N10L2 comes in a Compact Surface Mount package and delivers up to 85 A of drain current.
The IXTT75N10L2 has a superior Digitally Enhanced Power MOSFET (DEPMOS) technology, capable of enhanced performance in various DC-DC converters and controller applications. The IXTT75N10L2 is designed to minimize switching losses with its low on-resistance and enhance performance in various DC-DC converters and controller applications.
The working principle of the IXTT75N10L2 is based on the fact that it is a field-effect transistor (FET) and the gate terminal can be used to control the on-off switching of the device. The IXTT75N10L2 is an enhancement-mode FET, which means that the gate terminal must be given a positive voltage relative to the source terminal in order for current to flow through the FET.
In other words, the IXTT75N10L2 works by applying a voltage between the gate and source terminals. This voltage causes the electric field to form around the channel of the transistor, allowing the current to flow through it.
The IXTT75N10L2 can be used in a wide range of applications, particularly ones where efficiency and power maximisation are required. The IXTT75N10L2 is especially useful in DC-DC converter applications, such as in solar panel systems and charging controllers.
The IXTT75N10L2 can also be used in motor controllers, LED drivers, switch-mode power supplies and motor protection circuitry. It is also used in AC-DC converters and inverters, power factor correction, active rectifiers and power switching.
The IXTT75N10L2 can operate in temperatures ranging from -55 to 150 degrees Celsius, making it a good choice for applications running in extreme temperatures. Its low on-resistance and fast switching times make it an ideal candidate for any power-management application.
In short, the IXTT75N10L2 is an efficient FET that is well suited for power management applications. Its DEPMOS technology and features such as low on-resistance, fast switching, and wide operating temperature make it an ideal choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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