IXTQ30N50L2 Allicdata Electronics

IXTQ30N50L2 Discrete Semiconductor Products

Allicdata Part #:

IXTQ30N50L2-ND

Manufacturer Part#:

IXTQ30N50L2

Price: $ 8.09
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 30A TO-3P
More Detail: N-Channel 500V 30A (Tc) 400W (Tc) Through Hole TO-...
DataSheet: IXTQ30N50L2 datasheetIXTQ30N50L2 Datasheet/PDF
Quantity: 1000
30 +: $ 7.27755
Stock 1000Can Ship Immediately
$ 8.09
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: Linear L2™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTQ30N50L2 application field and working principle

IXTQ30N50L2 is a type of MOSFET (Metal Oxide Field Effect Transistor). MOSFETs are a class of transistors whose electronics properties are easily modulated by controlling the voltage applied to the gate terminal. IXTQ30N50L2 is a single n-channel enhancement type, and as such, behaves like an electronic switch, allowing or preventing current from flowing through the transistor depending on the gate voltage applied. It is commonly used in power supplies and other applications where switching and high current flows are involved. 

A MOSFET is made up of four terminals, the source, gate, drain, and body (often called the substrate). In an n-type MOSFET, the source is connected to the gate and the drain is connected to the body. When a voltage is applied to the gate, a small electric field is created. This field causes electrons to be repelled by the source and collected in the drain. Since electrons are negatively charged, a current is formed when the voltage is low enough to overcome the resistance of the semiconductor barrier. The more voltage applied to the gate, the more intense the field and thus the more current can flow through the device.

The IXTQ30N50L2\'s most common application is as a power switch in AC/DC inductive loads such as HVAC, motors, and solenoids. The device is also widely used in DC to DC converters and in DC lighting applications. This specific device is rated for a drain-source voltage of up to 500 Volts, which makes it suitable for high voltage applications. It has an 8A drain current and a 300 Watts power dissipation rating, making it a rugged and reliable switch for power applications. 

The IXTQ30N50L2 has a typical operating temperature range of -55 to +150 degrees Celsius. However, it should be noted that due to its switching characteristics it is unable to handle signals above 200KHz, making it unsuitable for high frequency applications.

In summary, IXTQ30N50L2 is a powerful and rugged single n-channel MOSFET suitable for high current applications. Its principal use is as an electronic switch in HVAC and DC lighting circuits, as well as in DC to DC converters. Due to its operating temperature range and current handling capacity, it can be used in many applications where reliable switching is required. Nevertheless, it is not suitable for high frequency applications and should not be used in those circumstances. 

The specific data is subject to PDF, and the above content is for reference

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