| Allicdata Part #: | IXTK60N50L2-ND |
| Manufacturer Part#: |
IXTK60N50L2 |
| Price: | $ 20.49 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 60A TO-264 |
| More Detail: | N-Channel 500V 60A (Tc) 960W (Tc) Through Hole TO-... |
| DataSheet: |  IXTK60N50L2 Datasheet/PDF |
| Quantity: | 1288 |
| 1 +: | $ 18.62280 |
| 10 +: | $ 17.22290 |
| 100 +: | $ 14.70950 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 (IXTK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 24000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 610nC @ 10V |
| Series: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTK60N50L2, also known as Super Junction MOSFET, is the latest transistor technology widely used in the field of MOSFETs today. It is a single transistor that has a high power efficiency, high current drive capability, and a fast switching performance. The IXTK60N50L2 is one of the most popular transistors for high current applications.
The IXTK60N50L2 is a comprehensive MOSFET device with a wide range of applications. It is mainly used in power converter applications and is suitable for DC-DC converters, DC-AC inverters, switched-mode power supplies, motor-driven amplifiers, Class D amplifier and other systems. It can also be used in circuit protection and load switching applications.
The IXTK60N50L2 utilizes a three-terminal MOSFET structure, with the source, gate, and drain pins connected to a power input, control input, and power output, respectively. Its operation is based on the principle of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), which enables high current carrying capability, low on-resistance, low turn-off time, and very low power dissipation. The use of the super junction structure allows the IXTK60N50L2 to have high current carrying capability, operation of high voltages (up to 500V) and fast switching times. This high quality MOSFET is able to reduce total power losses and control circuit switching times, allowing for more efficient control of power conversion.
The IXTK60N50L2 is also equipped with protection features such as over-voltage protection, short circuit protection, temperature protection functions, and other reverse protection functions. These features make the IXTK60N50L2 suitable for multiple power converting applications. With its high energy efficiency and superior performance, the IXTK60N50L2 is widely used in a variety of electronics systems for their reliable operation.
In summary, the IXTK60N50L2 is a single transistor device designed for power conversion and high power efficiency. Its operation is based on the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) principle, which allows it to carry high current while maintaining low on-resistance and fast switching times. The IXTK60N50L2 is equipped with protection features, making it suitable for multiple power applications. It is widely used in a variety of electronics systems due to its reliable operation and superior performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IXTK90N25L2 | IXYS | -- | 237 | MOSFET N-CH 250V 90A TO-2... |
| IXTK60N50L2 | IXYS | 20.49 $ | 1288 | MOSFET N-CH 500V 60A TO-2... |
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| IXTK120N20P | IXYS | 6.64 $ | 1000 | MOSFET N-CH 200V 120A TO-... |
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