Allicdata Part #: | IXTK240N075L2-ND |
Manufacturer Part#: |
IXTK240N075L2 |
Price: | $ 16.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 75V 240A (Tc) 960W (Tc) Through Hole TO-... |
DataSheet: | IXTK240N075L2 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 15.35860 |
Gate Charge (Qg) (Max) @ Vgs: | 546nC @ 10V |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 960W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 19000pF @ 25V |
Vgs (Max): | ±20V |
Series: | Linear L2™ |
Vgs(th) (Max) @ Id: | 4.5V @ 3mA |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 120A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 240A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXTK240N075L2 is a non-polar, n-channel enhancement-mode vertical DMOS transistor designed to utilize the semiconductor surface passivation process, allowing the transistors to be integrated onto a surface mount device substrate. This transistor is specially designed for advanced high frequency, low noise and low on-resistance applications, such as low power pulsing, power steering and power management.
IXTK240N075L2 Application Field:
This type of transistor is commonly used in the fields of power MOSFETs, motor control, and motor protection and control. It can be used in applications such as low voltage automotive electronics, telecommunication power, battery cell protection, and motor control; which require both current and voltage control.
IXTK240N075L2 Working Principle:
The working principle of this type of transistor is based on the principle of enhancement-mode operation. In enhancement mode, positive gate-to-source voltage (VGS) is applied to the transistor to turn it on. There is a "threshold voltage" at which the transistor can be turned on; any voltage over the threshold will cause the transistor to operate. The increase in current (I) through the channel is determined by the voltage applied (VDS), and the strength of the current decreases with decreasing VDS.
The IXTK240N075L2 has an optimized gate oxide structure, which makes it suitable for low voltage operation and fast switching speeds. This transistor also has an improved temperature coefficient, which helps to minimize the effects of temperature on the operation and life of the device.
In addition, this transistor is designed to minimize power losses due to switching, and can operate at a wide range of frequencies. This makes it especially suitable for DC-to-DC power conversion, motor control and other high frequency, low noise applications.
The IXTK240N075L2 also has an RDS(on) rating of 0.0075V, which means it is capable of dissipating very low levels of heat. This makes it ideal for applications in which high power and low losses must be achieved.
The IXTK240N075L2 is also a very small package, making it well-suited for space-saving applications where size is a factor. It is also designed to be used in mobile devices, where its low power consumption will help to prolong battery life.
In summary, the IXTK240N075L2 is an ideal solution for applications which require high frequency low noise operations, low power consumption, and long device life. It is suitable for a variety of applications, including DC-to-DC power conversion, motor control, and telecommunication power. Its optimized gate oxide structure, low RDS(on) rating, and small package size make it an excellent choice in designs with space constraints.
The specific data is subject to PDF, and the above content is for reference
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