IXTH75N10L2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	215nC @ 10V
Series:	Linear L2™
Rds On (Max) @ Id, Vgs:	21 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTH75N10L2 is a part of Insulated Gate Bipolar Transistor (IGBT) integrated circuit family. It is a high-voltage device of the third generation with low collector-emitter saturation voltage. It consists of two insulated gate terminals besides collector and emitter terminals. It is a low turn-on voltage 4-pin MOSFET transistor. It has good levels of temperature stability, leakage current and has on-state performance which is unmatched by conventional power MOSFETs.The most important property of IXTH75N10L2 that sets it apart from conventional power MOSFETs is its higher breakdown voltage and lower gate-source capacitance. This makes it suitable for high frequency switching applications. It also has low reverse recovery time, allowing faster switching operations. The device also has wide operating temperature range, enabling its use under harsh environmental conditions.The IXTH75N10L2 has a variety of applications in various industries, such as power conversion, motor control, and communications. In power conversion, the device can be used as a switch at high voltage and current levels. In motor control, it can be used for pulse width modulation (PWM) control of DC and AC motors. The device can also be used for FET switching in analog circuits for video and communications equipment.The working principle of the IXTH75N10L2 is based on that of the Insulated Gate Bipolar Transistor (IGBT), the high voltage of which is maintained with an insulated gate. The gate of the device is connected to the gate terminal which supplies gate current for the connection of an external gate bias circuit. When the gate bias voltage is applied, IGFETs are activated, which cause charge to flow through the base of the IGBT. As the current flows through the IGBT, holes and electrons are created thereby allowing the current to flow between the emitter and collector in the normal direction. As the voltage increases, the IGFETs reach the peak conduction point at which the current is limited by the resistance.The IXTH75N10L2 can be used to switch a variety of loads, such as resistive, inductive, and capacitive. It can also be used for pulse width modulation applications. The device can be applied within various operating parameters, such as over temperature, overcurrent, low currents and negative gate voltage. The device also has a low turn-on voltage, which allows for higher performance and convenient circuit design.The IXTH75N10L2 is a highly efficient and reliable transistor integrated device. Its high breakdown voltage, low gate-source capacitance, and low reverse recovery time make it ideal for high frequency switching applications. The device has a wide range of applications in power conversion, motor control, and communications, as well as FET switching applications in analog circuits. The device has excellent temperature stability and leakage current, allowing it to be used in harsh environmental conditions. The low turn-on voltage and suitable operating parameters make the IXTH75N10L2 a reliable and efficient choice for the application needs.

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