3a output photocoupler - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SI2302-TPMSTR-N D	SI2302-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	21000 Order	3000+: $0.1123
TSM3N80CPROGTR- ND	TSM3N80CP ROG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.3454
IPU80R2K0P7AKMA 1-ND	IPU80R2K0P7AKMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V Power Dissipation (Max): 24W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1466 Order	1+: $0.6363 10+: $0.5657 100+: $0.4471 500+: $0.3468 1000+: $0.2738
DMP2130LDITR-ND	DMP2130L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	--
DMP2123LDITR-ND	DMP2123L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 16V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	84000 Order	--
296-28317-2-ND	CSD25303W1015	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DSBGA (1x1.5) Package / Case: 6-UFBGA, DSBGA	1000 Order	--
FQI3N80TU-ND	FQI3N80TU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power Dissipation (Max): 3.13W (Ta), 107W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
497-17146-2-ND	STL4LN80K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 1.2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 100V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) VHV Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.3722
SI7898DP-T1-E3T R-ND	SI7898DP-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
IPS80R2K0P7AKMA 1-ND	IPS80R2K0P7AKMA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V Power Dissipation (Max): 24W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1500 Order	1+: $0.6363 10+: $0.5657 100+: $0.4471 500+: $0.3468 1000+: $0.2738
SI2315BDS-T1-GE 3TR-ND	SI2315BDS-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.85A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	--
FQD4N20TMFSTR-N D	FQD4N20TM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SI2318DS-T1-E3T R-ND	SI2318DS-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
AOTF454L-ND	AOTF454L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 3A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V Power Dissipation (Max): 2.1W (Ta), 41W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	1000 Order	--
CZDM1003NTR-ND	CZDM1003N TR	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	3000 Order	1000+: $0.2318
MCH3374-TL-WOST R-ND	MCH3374-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
TSM60NB1R4CPROG TR-ND	TSM60NB1R4CP RO G	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 257.3pF @ 100V Power Dissipation (Max): 28.4W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1875+: $0.1638
SI3465DV-T1-GE3 -ND	SI3465DV-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Vgs (Max): 20V Power Dissipation (Max): 1.14W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	3000+: $0.1576
FQU4N20TU-ND	FQU4N20TU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
SI2311DS-T1-GE3 -ND	SI2311DS-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 4V Power Dissipation (Max): 710mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
SI2318DS-T1-GE3 TR-ND	SI2318DS-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
FDZ391PTR-ND	FDZ391P	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 10V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WLCSP (1.0x1.5) Package / Case: 6-XFBGA, WLCSP	1000 Order	5000+: $0.1614
AOB256L-ND	AOB256L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 3A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 75V Power Dissipation (Max): 2.1W (Ta), 83W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (DPak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPD80R2K0P7ATMA 1TR-ND	IPD80R2K0P7ATMA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V Power Dissipation (Max): 24W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	2500+: $0.2555
FQD4N25TM-WSTR- ND	FQD4N25TM-WS	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
STL5N80K5-ND	STL5N80K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat (5x6) VHV Package / Case: 8-PowerVDFN	1000 Order	--
PCP1302-TD-HOST R-ND	PCP1302-TD-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 266 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V Power Dissipation (Max): 3.5W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89/PCP-1 Package / Case: TO-243AA	10000 Order	1000+: $0.1392
SIHD3N50D-E3-ND	SIHD3N50D-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
AOC2401-ND	AOC2401	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 41 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1327pF @ 15V Power Dissipation (Max): 550mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-AlphaDFN (1.57x1.57) Package / Case: 4-SMD, No Lead	1000 Order	1+: $0
296-47319-2-ND	CSD17484F4	Texas Instruments	View more Series: FemtoFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Rds On (Max) @ Id, Vgs: 121 mOhm @ 500mA, 8V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	1000 Order	--
MTM761230LBFTR- ND	MTM761230LBF	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSMini6-F1-B Package / Case: 6-SMD, Flat Leads	1000 Order	3000+: $0.1397
FQD4N25TF-ND	FQD4N25TF	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
RND030N20TLTR-N D	RND030N20TL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 870 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.207
SCH1331-TL-WOST R-ND	SCH1331-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 84 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563/SCH6 Package / Case: SOT-563, SOT-666	1000 Order	1+: $0
SQ1431EH-T1_GE3 TR-ND	SQ1431EH-T1_GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 25V Power Dissipation (Max): 3W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	--
AO3413L-ND	AO3413L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 97 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
JANTXV2N6800U-N D	JANTXV2N6800U	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/557 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
FDN339AN_G-ND	FDN339AN_G	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
JANTX2N6800-ND	JANTX2N6800	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/557 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	1000 Order	--
RJK5033DPD-00#J 2TR-ND	RJK5033DPD-00#J 2	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	3000+: $0.6064

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