SI7898DP-T1-E3

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The SI7898DP-T1-E3 is a single, depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with an 8-pin TO-252 package. It is a depletion-mode device with an efficient power consumption design. It relies on a metal-oxide semiconductor to control the current. The SI7898DP-T1-E3 is a specialized MOSFET optimal for low-voltage, low-current applications, such as battery-powered devices, DC-DC converters, motor control circuits, switching power supplies, and temperature control.

Features

• Wide Drain-Source Voltage Range (VDS): 48 V
• Small Design 8-Pin TO-252 Package
• Wide Drain Current (ID): 3.2 A
• High Drain-Source On-state Resistance (RDS(on)): 10 mΩ
• High Switching Speed: 12ns typ.
• Low Threshold Voltage (VGS): -2.7V
• Low Input Capacitance: 2pF
• High Avalanche Current: 28A

Design Principle

The SI7898DP-T1-E3 is a depletion-mode transistor, which means it is designed with an inherent open-circuit gate. This gives the MOSFET the capability to act as a switching device as well as a level shifter. When the gate voltage is lowered to below the threshold voltage (VGS), the transistor turns on and the current can flow between the drain and source. The drain-source on-state resistance (RDS(on)) of the device is only 10 mΩ, which is what gives it its high efficiency and low power consumption.

The MOSFET is also able to store electrical charge on its gate. This stored charge is what gives the transistor its speed, as it can be changed quickly. When the gate voltage is increased, the transistor will turn off and no current will be able to flow between the drain and source. This stored charge also allows for low input capacitance (2 pF), ensuring that the device can switch quickly without any lag.

ApplicationFields

The SI7898DP-T1-E3 is a highly efficient, low-voltage, low-current MOSFET, making it suitable for a wide range of applications. It is commonly used in battery-powered devices and DC-DC converters due to its low power consumption. Its low input capacitance and high switching speed also make it ideal for motor control circuits, switching power supplies, and temperature control.

The SI7898DP-T1-E3 can also be used in other applications that require a low-voltage, low-current device. It is often found in automotive electronics, consumer electronics, industrial and medical electronics, and photovoltaic inverters. Its small 8-pin TO-252 package makes it suitable for use in tight spaces. The device also features a high avalanche current, allowing it to be used in harsh environments.

Conclusion

The SI7898DP-T1-E3 is a highly efficient single, depletion-mode MOSFET with an 8-pin TO-252 package. It is designed for low-voltage, low-current applications and relies on a metal-oxide semiconductor to control the current. The MOSFET features a wide drain-source voltage range, a wide drain current, a high drain-source on-state resistance, a high switching speed, and a low input capacitance. Its low power consumption and high efficiency make it suitable for use in battery-powered devices and DC-DC converters. Additionally, the device is also used in a range of other applications, such as motor control circuits, switching power supplies, temperature control, and photovoltaic inverters.

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