560 ohms resistor - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
R8010ANX-ND	R8010ANX	ROHM Semiconductor	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	145 Order	--
TK9P65WRQCT-ND	TK9P65W,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 350A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	3872 Order	1+: $1.2978 10+: $1.1743 100+: $0.9436 500+: $0.7339 1000+: $0.6081
TK560P60YRQTR-N D	TK560P60Y,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3885
TK560A60YS4X-ND	TK560A60Y,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 30W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	121 Order	1+: $0.8883 50+: $0.71 100+: $0.6212 500+: $0.4818 1000+: $0.3804
APT28M120B2-ND	APT28M120B2	Microsemi Corporation	View more Series: POWER MOS 8 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX [B2] Package / Case: TO-247-3 Variant	1000 Order	1+: $16.6005 30+: $14.108 120+: $13.1122
SI1002R-T1-GE3- ND	SI1002R-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 610mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V Power Dissipation (Max): 220mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	1000 Order	--
TK560A65YS4X-ND	TK560A65Y,S4X	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 30W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	185 Order	1+: $1.0143 50+: $0.8114 100+: $0.71 500+: $0.5506 1000+: $0.4347
FQAF15N70-ND	FQAF15N70	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	1000 Order	1+: $0
TK8P60W5RVQTR-N D	TK8P60W5,RVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	4000 Order	2000+: $0.4716
497-7537-5-ND	STP9NM50N	STMicroelectronics	View more Series: MDmesh Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Power Dissipation (Max): 70W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
497-7980-2-ND	STD9NM50N	STMicroelectronics	View more Series: MDmesh II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
TK560P65YRQTR-N D	TK560P65Y,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	2000+: $0.355
785-1312-2-ND	AON7458	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 1.5A (Ta), 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	1000 Order	--
785-1361-2-ND	AOD8N25	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 25V Power Dissipation (Max): 78W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
785-1454-5-ND	AOI8N25	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 25V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	3500+: $0.2633
497-7476-5-ND	STF9NM50N	STMicroelectronics	View more Series: MDmesh Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Power Dissipation (Max): 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
STD9NM50N-1-ND	STD9NM50N-1	STMicroelectronics	View more Series: MDmesh Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V Power Dissipation (Max): 70W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
497-17075-ND	STI6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Full Pack, IPak	195 Order	1+: $1.8081 50+: $1.4581 100+: $1.3122 500+: $1.0206 1000+: $0.8457
497-17074-ND	STP6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	190 Order	--
497-17076-ND	STU6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Long Leads, IPak, TO-251AB	192 Order	1+: $1.5435 75+: $1.2461 150+: $1.1215 525+: $0.8723 1050+: $0.7228
497-17073-ND	STF6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	--
497-17077-ND	STW6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	521 Order	1+: $2.142 30+: $1.7197 120+: $1.5669 510+: $1.2688 1020+: $1.0701
SCT2H12NYTBTR-N D	SCT2H12NYTB	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id: 4V @ 410A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V Power Dissipation (Max): 44W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	15 Order	400+: $2.6673
497-17071-ND	STF4N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Power Dissipation (Max): 20W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3	143 Order	1+: $1.2537 50+: $1.0107 100+: $0.9096 500+: $0.7075 1000+: $0.5862
497-16962-ND	STF5N80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 20W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $1.1655 10+: $1.0332 100+: $0.8165 500+: $0.6332 1000+: $0.4999
497-17069-2-ND	STD4N90K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.4919
497-16923-2-ND	STB5N80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5778
497-16927-2-ND	STD3LN80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 2.63nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3651
497-17072-2-ND	STD6N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.7023
497-16933-ND	STP5N80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	12991 Order	1+: $1.1151 10+: $0.9885 100+: $0.781 500+: $0.6057 1000+: $0.4782
497-16968-ND	STFU6N65	STMicroelectronics	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 25V Power Dissipation (Max): 620mW (Ta), 77W (Tc) Operating Temperature: -55C ~ 150C (TA) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	995 Order	1+: $1.134 10+: $1.0244 100+: $0.8232 500+: $0.6403 1000+: $0.5305
497-16929-2-ND	STD5N80K5	STMicroelectronics	View more Series: MDmesh Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	2500+: $0.4108
497-16928-2-ND	STD5N60DM2	STMicroelectronics	View more Series: MDmesh DM2 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 1.75A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2395
497-17070-ND	STP4N90K5	STMicroelectronics	View more Series: MDmesh K5 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 100V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	120 Order	--
VP0300B-E3-ND	VP0300B-E3	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1A, 12V Vgs(th) (Max) @ Id: 4.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V	1000 Order	1+: $0
RFP4N100-ND	RFP4N100	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 20V Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
CPC3703C-ND	CPC3703C	IXYS Integrated Circuits Division	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	1000 Order	1+: $0
CPC3701CTR-ND	CPC3701CTR	IXYS Integrated Circuits Division	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	1000 Order	1000+: $0.2087
RHU003N03T106TR -ND	RHU003N03T106	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 300mA, 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V Power Dissipation (Max): 200mW (Ta) Mounting Type: Surface Mount Supplier Device Package: UMT3 Package / Case: SC-70, SOT-323	1000 Order	3000+: $0.0638
2SK0665G0LTR-ND	2SK0665G0L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 50 Ohm @ 20mA, 5V Vgs(th) (Max) @ Id: 3.5V @ 100A Vgs (Max): 8V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-F2 Package / Case: SC-85	1000 Order	1+: $0

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