STP5N80K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	177pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	1.75 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP5N80K5 Application Field and Working Principle

Introduction

STP5N80K5 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is made from silicon, and it has a n-channel. A field-effect transistor (FET) is a type of transistor which is capable of amplifying or switching signals. This type of transistor gives the user a wide range of electrical and thermal options such as those related to resistance, current, and voltage.

Classification

STP5N80K5 belongs to the group of transistors known as FETs (Field-Effect Transistors), and more specifically, to the group of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor), and in particular, to the single MOSFETs family. FETs are three-terminal devices, usually with a gate (G), a source (S) and a drain (D). The gate terminal is used to turn the device on and off. As for MOSFETs, these are a specialized type of field-effect transistor, where the source and drain are separated by a thin insulating layer called the gate oxide.

Working Principle

The working principle of the STP5N80K5 is based on the concept of generating a field effect when the gate terminal of the device is activated. This field is generated by the electric charge applied to the gate terminal, which attracts more charge across the insulator, thus creating an inversion layer in the semiconductor material. This inversion layer affects the electrical current flow in the device, thus allowing the user to control the resistance and current of the device. This is done by varying the gate voltage and, as a result, changing the electrical property of the device.

Application Field

The STP5N80K5 is a power MOSFET and one of the most suitable devices for power conversion applications. Due to its features and characteristics, the device is suitable for applications such as switching power supplies, DC-DC converters, low frequency amplifiers, motor and solenoid control, and lighting ballasts. In addition, it is also commonly used in voltage regulation, switched-mode power supplies, and audio amplifiers.

Conclusion

In conclusion, the STP5N80K5 is a power MOSFET manufactured by STMicroelectronics. It belongs to the group of FETs (Field-Effect Transistors), and more specifically, to the group of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor), and in particular, to the single MOSFETs family. It works by generating a field effect when the gate terminal is activated, and it is one of the most suitable devices for power conversion applications such as switching power supplies and low frequency amplifiers.

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