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Search Result:6ohm resistor

 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
RN1108(T5L,F,T) RN1108(T5LFT)TR
-ND		 RN1108(T5L,F,T) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SSM
1000
Order

1+:

$0

 RN1108(T5LFT)TR-ND Datasheet
DTA143ZETL DTA143ZETLTR-ND DTA143ZETL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: EMT3
 Base Part Number: DTA143
1000
Order

--

 DTA143ZETLTR-ND Datasheet
MUN2136T1G MUN2136T1G-ND MUN2136T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 230mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SC-59
1000
Order

12000+:

$0.018

 MUN2136T1G-ND Datasheet
NSVDTC113EM3T5G NSVDTC113EM3T5G
-ND		 NSVDTC113EM3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
1000
Order

8000+:

$0.032

 NSVDTC113EM3T5G-ND Datasheet
NSVMUN5236T1G NSVMUN5236T1G-N
D		 NSVMUN5236T1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 202mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SC-70-3 (SOT323)
1000
Order

6000+:

$0.0374

 NSVMUN5236T1G-ND Datasheet
DTD513ZETL DTD513ZETL-ND DTD513ZETL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 12V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 260MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: EMT3
1000
Order

3000+:

$0.0558

 DTD513ZETL-ND Datasheet
UNR311200L UNR311200LTR-ND UNR311200L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F1
1000
Order

1+:

$0

 UNR311200LTR-ND Datasheet
UNR411900A UNR411900ATB-ND UNR411900A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR411900ATB-ND Datasheet
DTA114YCAHZGT116 DTA114YCAHZGT11
6TR-ND		 DTA114YCAHZGT11
6		 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 350mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
Order

3000+:

$0.0202

 DTA114YCAHZGT116TR-ND Datasheet
RN2109ACT(TPL3) RN2109ACT(TPL3)
TR-ND		 RN2109ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2109ACT(TPL3)TR-ND Datasheet
RN2115,LF(CB RN2115LF(CBTR-N
D		 RN2115,LF(CB Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 200MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SSM
1000
Order

3000+:

$0.0228

 RN2115LF(CBTR-ND Datasheet
DTA115EET1 DTA115EET1OS-ND DTA115EET1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
 Base Part Number: DTA115
1000
Order

--

 DTA115EET1OS-ND Datasheet
UNR32AM00L UNR32AM00LTR-ND UNR32AM00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F1
1000
Order

1+:

$0

 UNR32AM00LTR-ND Datasheet
PDTC123EE,115 568-2150-2-ND PDTC123EE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTC123
1000
Order

1+:

$0

 568-2150-2-ND Datasheet
FJNS4213RTA FJNS4213RTA-ND FJNS4213RTA ON Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 Short Body
 Supplier Device Package: TO-92S
1000
Order

1+:

$0

 FJNS4213RTA-ND Datasheet
UNR911TG0L UNR911TG0LTR-ND UNR911TG0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR911TG0LTR-ND Datasheet
DRC9114E0L DRC9114E0LTR-ND DRC9114E0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRC9114
1000
Order

--

 DRC9114E0LTR-ND Datasheet
DTDG23YPT100 DTDG23YPT100TR-
ND		 DTDG23YPT100 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 1A
 Voltage - Collector Emitter Breakdown (Max): 60V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
 Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 1.5W
 Mounting Type: Surface Mount
 Package / Case: TO-243AA
 Supplier Device Package: MPT3
 Base Part Number: DTDG23
2000
Order

--

 DTDG23YPT100TR-ND Datasheet
DTA023EEBTL DTA023EEBTLTR-N
D		 DTA023EEBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: EMT3F (SOT-416FL)
1000
Order

--

 DTA023EEBTLTR-ND Datasheet
ADTA143ZUAQ-13 ADTA143ZUAQ-13-
ND		 ADTA143ZUAQ-13 Diodes Incorporated
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 330mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323
1000
Order

10000+:

$0.0232

 ADTA143ZUAQ-13-ND Datasheet
DTA124XM3T5G DTA124XM3T5GOST
R-ND		 DTA124XM3T5G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
 Base Part Number: DTA124
1000
Order

8000+:

$0.032

 DTA124XM3T5GOSTR-ND Datasheet
PDTA144VMB,315 PDTA144VMB,315-
ND		 PDTA144VMB,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 3-XFDFN
 Supplier Device Package: 3-DFN1006B (0.6x1)
 Base Part Number: PDTA144
1000
Order

10000+:

$0.0533

 PDTA144VMB,315-ND Datasheet
DRC3123J0L DRC3123J0LTR-ND DRC3123J0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F2-B
 Base Part Number: DRC3123
1000
Order

--

 DRC3123J0LTR-ND Datasheet
PDTC115EE,115 568-11057-2-ND PDTC115EE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 20mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTC115
1000
Order

1+:

$0

 568-11057-2-ND Datasheet
PDTA144WE,115 568-2138-2-ND PDTA144WE,115 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTA144
1000
Order

1+:

$0

 568-2138-2-ND Datasheet
UNR421400A UNR421400ATB-ND UNR421400A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
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1+:

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 UNR421400ATB-ND Datasheet
DTA143ZEFRATL DTA143ZEFRATLTR
-ND		 DTA143ZEFRATL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: EMT3
3000
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3000+:

$0.0236

 DTA143ZEFRATLTR-ND Datasheet
DTA114EEBHZGTL DTA114EEBHZGTLT
R-ND		 DTA114EEBHZGTL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: EMT3F (SOT-416FL)
1000
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3000+:

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 DTA114EEBHZGTLTR-ND Datasheet
DTA043ZUBTL DTA043ZUBTLTR-N
D		 DTA043ZUBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
1000
Order

--

 DTA043ZUBTLTR-ND Datasheet
PDTA113ZM,315 PDTA113ZM,315-N
D		 PDTA113ZM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTA113
1000
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10000+:

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 PDTA113ZM,315-ND Datasheet
DTA123JKAT246 DTA123JKAT246-N
D		 DTA123JKAT246 ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SOT-346
 Supplier Device Package: SOT-346
 Base Part Number: DTA123
1000
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10000+:

$0.0234

 DTA123JKAT246-ND Datasheet
UNR422100A UNR422100ATB-ND UNR422100A Panasonic Electronic Components
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 200MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

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 UNR422100ATB-ND Datasheet
FJN3307RBU FJN3307RBU-ND FJN3307RBU ON Semiconductor
View more  Packaging: Bulk
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: TO-226-3, TO-92-3 (TO-226AA)
 Supplier Device Package: TO-92-3
1000
Order

1+:

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 FJN3307RBU-ND Datasheet
UNR31AEG0L UNR31AEG0LTR-ND UNR31AEG0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F1
1000
Order

1+:

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 UNR31AEG0LTR-ND Datasheet
SMUN5114T3G SMUN5114T3G-ND SMUN5114T3G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 202mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SC-70-3 (SOT323)
1000
Order

20000+:

$0.0135

 SMUN5114T3G-ND Datasheet
RN1118MFV,L3F RN1118MFVL3F-ND RN1118MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
Order

8000+:

$0.0183

 RN1118MFVL3F-ND Datasheet
PDTC124EM,315 1727-3038-2-ND PDTC124EM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTC124
1000
Order

10000+:

$0.0209

 1727-3038-2-ND Datasheet
PDTD113EQAZ PDTD113EQAZ-ND PDTD113EQAZ Nexperia USA Inc.
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 500mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 210MHz
 Power - Max: 325mW
 Mounting Type: Surface Mount
 Package / Case: 3-XDFN Exposed Pad
 Supplier Device Package: DFN1010D-3
1000
Order

5000+:

$0.037

 PDTD113EQAZ-ND Datasheet
NSVDTA144EET1G NSVDTA144EET1G-
ND		 NSVDTA144EET1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
1000
Order

6000+:

$0.0374

 NSVDTA144EET1G-ND Datasheet
PDTA123JMB,315 PDTA123JMB,315-
ND		 PDTA123JMB,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Frequency - Transition: 180MHz
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: 3-XFDFN
 Supplier Device Package: 3-DFN1006B (0.6x1)
 Base Part Number: PDTA123
1000
Order

10000+:

$0.0533

 PDTA123JMB,315-ND Datasheet
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