PDTC115EE,115 Discrete Semiconductor Products

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The PDTC115EE is a single, pre-biased bipolar junction transistor (BJT) for use in industrial, manufacturing, and automotive application fields. The device is designed for use in low-noise signal amplification, switching, and RF applications.

The PDTC115EE has a package size of 4.5mm x 5mm, and a collector-emitter breakdown voltage of 600V, meaning that it can operate in a wide variety of application fields. The transistor has an hFE (DC current gain) range of 50-100, and a maximum output voltage of 18V, making it suitable for a range of applications.

The PDTC115EE transistor has an operating temperature range of -55°C to 125°C, and a storage temperature range of -65°C to 150°C. This ensures that the device can be used in a variety of environmental conditions without any issues.

One of the main advantages of using the PDTC115EE is its low power dissipation. At full load, the device can dissipate a maximum of 0.2W, making it suitable for applications where low-power dissipation is important. The device also offers a high level of reliability, with a guaranteed life of up to 10 million hours.

In terms of its working principle, the PDTC115EE is a BJT with three pins. It uses an N-type semiconductor material for its collector, base and emitter. The current flowing through the base-emitter junction is controlled by the current flowing through the collector-base junction.

When a voltage is applied to the base, current will flow through the emitter and to the collector. This results in amplification of the signal applied to the base. The PDTC115EE is designed to operate with a minimum base-emitter voltage of 1V and a maximum voltage of 2.5V.

The PDTC115EE is a single, pre-biased BJT designed for use in industrial, manufacturing, and automotive applications. It has a small package size, low power dissipation, and a wide temperature range, making it suitable for a range of applications. The device has an hFE range of 50-100, and a guaranteed life of up to 10 million hours. It also has a collector-emitter breakdown voltage of 600V. In terms of its working principle, the device uses an N-type semiconductor material for its collector, base, and emitter, and works by amplifying the signals applied to its base.

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