FJN3307RBU

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Introduction

The FJN3307RBU is an NPN low-noise pre-biased single transistor, combining high gain, low noise and low drop-off voltage. It is designed for applications where high-gain and low distortion are paramount. This device is one of a wide range of Transistors - Bipolar (BJT) - Single, Pre-Biased products from FJN Corporation. This device is available in a variety of package styles, including DIP and SMD.

Applications

The FJN3307RBU is well-suited for applications such as low-noise power RF amplifiers, low-noise programmable gain amplifiers, and low-power audio amplifiers. It is also used in high-speed circuitry, such as high-speed logic gates, linear amplifiers, pulse circuits, and frequency up-converters. The device is also used in switching amplifiers, excited oscillators, and XTAL (crystal) oscillators.

Working Principle

The FJN3307RBU is an NPN transistor, combining high gain, low noise and low drop-off voltage. The device consists of three P-N junctions and two terminals, a collector and an emitter. The P-N junctions form the three regions of a transistor: the base, the collector and the emitter. By applying a voltage to the base terminal of the P-N junction, an electric current passes through the N-region, the transistor’s collector, and out through the emitter. The emitter current is proportional to the base voltage, and the collector voltage is proportional to the emitter current.

The FJN3307RBU is designed to have a low noise floor and low drop-off voltage. This is achieved using an internal compensation network that maintains a low noise and low drop-off voltage even when operating within the wide dynamic range of the device. The device also utilizes a pre-biased base resistor which helps optimize the gain and reduce noise across the band. In addition, the pre-biased base resistor helps reduce the input power requirements for the device.

Conclusion

The FJN3307RBU is an NPN low-noise pre-biased single transistor, combining high gain, low noise and low drop-off voltage. It is well-suited for a variety of applications, including low-noise power RF amplifiers, low-noise programmable gain amplifiers, and low-power audio amplifiers. The device is designed to have a low noise floor and low drop-off voltage, using an internal compensation network and a pre-biased base resistor. This helps optimize the gain and reduce noise across the band, while reducing the input power requirements for the device.

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