UNR911TG0L Discrete Semiconductor Products

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A pre-biased single transistor, in other words a uniform region of mass, refers to a transistor that is attached to a voltage source prior to measuring any characteristic values or parameters. The UNR911TG0L is a pre-biased single n-channel junction field-effect transistor (JFET). It is a unipolar, low capacitance, ultra-low voltage device optimized for use in high-speed, low power digital applications, including logic detection and clamping, line receivers, video and pulse circuits.

The UNR911TG0L has an active voltage range of -6.5V to -26.5V and can operate at a temperature range of -55°C to +125°C. It is a polarization effect transistor with an isolated structure that allows that allows for a very low on-resistance channel between the source and drain. This enables the device to provide excellent high frequency performance.

The gate electrode of the transistor is isolated from the source and drain by an oxide region and allows the device to be operated in a very voltage range. The active region of the device consists of a semiconductor P-N junction, with the junction gate being at ground potential, allowing a very high electrostatic control of the current flow between the source and drain. The transistor is constructed so that the gate-to-source voltage is constant and the control of the current is achieved by the application of a voltage from the drain to the gate terminal.

The main types of application area for the UNR911TG0L transistor is digital switching and logic. However, due to its low capacitance and low leakage characteristics, it is also well suited for applications such as ADC/DAC converters, current measurement, high-gain amplifiers, interfacing to high voltage applications, and high frequency amplifier and mixers. This low current, low voltage device with its high speed operation, makes it a popular choice for high speed communication and control systems.

The working principle of the UNR911TG0L is based on the generation of an electric field between the source and the drain electrodes. This electric field is generated by an applied voltage from the gate to the source electrode, which causes an accumulation of minority carriers in the channel. This results in an increase in current flow between the source and the drain is used for on-off switching, current level detection, pulse shaping, and other digital applications.

The UNR911TG0L is a rugged, cost-effective component designed for flexibility and performance in high speed, low power digital applications. Its low capacitance, low power consumption, and low leakage current characteristics make the device suitable for a variety of applications in many industries.

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