Allicdata Part #: | 568-2150-2-ND |
Manufacturer Part#: |
PDTC123EE,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 150MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC123EE,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | PDTC123 |
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The PDTC123EE,115 Transistor is a pre-biased, single bipolar junction transistor (BJT). It is designed to operate in a variety of applications, including linear and switching mode applications, and is suitable for low voltage, low current applications.
The PDTC123EE,115 is available in a variety of package types, including a three-legged, 8-pin plastic dual-in-line package (PDIP), and a surface mount package (SMD). The PDIP package is compatible with most mounting and wire wrapping uses, while the SMD package is ideal for automated assembly applications.
The PDTC123EE,115 transistor features a wide range of characteristics that make it ideal for many applications. It has a small footprint due to its single die construction, and is well-suited for use in small or portable devices, or for use in higher power applications. It has a wide gain bandwidth product of 0.4 GHz, and a very low on/off switching time, allowing for a fast data transfer rate. It also has a high current capability of 130mA, making it suitable for a wide range of applications. Additionally, it offers a reverse breakdown voltage of 30V and a maximum Collector-Base Voltage of 30V, making it suitable for most applications.
The PDTC123EE,115 has a simplified working principle compared to other transistors. The transistor consists of three terminals: the collector, the base, and the emitter. When a voltage is applied to the base-emitter junction, the base current increases, which in turn increases the collector current. This current increase gives the transistor its gain, which is the ratio of collector current to base current. Additionally, the PDTC123EE,115 transistor has the added benefit of being pre-biased, meaning that the transistor can be used immediately with no additional biasing and no additional components.
The PDTC123EE,115 is an ideal device for a wide range of applications. It is suitable for low voltage and low current applications, as well as high power applications. It can be used for linear as well as switching applications, and its pre-biased design makes it easy to install. Additionally, its high current capability and fast switching time make it suitable for fast data transfer and a wide range of other applications.
The specific data is subject to PDF, and the above content is for reference
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