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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
IRF7807VD1 IRF7807VD1-ND IRF7807VD1 Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VD1-ND Datasheet
IRF7807VD1TR IRF7807VD1TR-ND IRF7807VD1TR Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VD1TR-ND Datasheet
IRF7807VD2TR IRF7807VD2TR-ND IRF7807VD2TR Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VD2TR-ND Datasheet
IRF7807VTR IRF7807VTR-ND IRF7807VTR Infineon Technologies
View more  Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
 Vgs (Max): 20V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807VTR-ND Datasheet
MTP50P03HDL MTP50P03HDLOS-N
D		 MTP50P03HDL ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 50A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
 Vgs (Max): 15V
 Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
 Power Dissipation (Max): 125W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220AB
 Package / Case: TO-220-3
1000
Order

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 MTP50P03HDLOS-ND Datasheet
MTB50P03HDLT4 MTB50P03HDLT4OS
CT-ND		 MTB50P03HDLT4 ON Semiconductor
View more  Packaging: Cut Tape (CT)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 50A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
 Vgs (Max): 15V
 Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
 Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D2PAK
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
Order

1+:

$0

 MTB50P03HDLT4OSCT-ND Datasheet
NTHS2101PT1 NTHS2101PT1OS-N
D		 NTHS2101PT1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 8V
 Current - Continuous Drain (Id) @ 25C: 5.4A (Tj)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 6.4V
 Power Dissipation (Max): 1.3W (Ta)
 Mounting Type: Surface Mount
 Supplier Device Package: ChipFET
 Package / Case: 8-SMD, Flat Lead
1000
Order

1+:

$0

 NTHS2101PT1OS-ND Datasheet
IRFU3412PBF IRFU3412PBF-ND IRFU3412PBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V
 Vgs(th) (Max) @ Id: 5.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
 Power Dissipation (Max): 140W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: IPAK (TO-251)
 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
1000
Order

1+:

$0

 IRFU3412PBF-ND Datasheet
IRFR3412PBF IRFR3412PBF-ND IRFR3412PBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V
 Vgs(th) (Max) @ Id: 5.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
 Power Dissipation (Max): 140W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D-Pak
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
Order

1+:

$0

 IRFR3412PBF-ND Datasheet
IRF7807APBF IRF7807APBF-ND IRF7807APBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807APBF-ND Datasheet
IRF7807VD1TRPBF IRF7807VD1PBFTR
-ND		 IRF7807VD1TRPBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807VD1PBFTR-ND Datasheet
IRF7807VD2TRPBF IRF7807VD2PBFTR
-ND		 IRF7807VD2TRPBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VD2PBFTR-ND Datasheet
IRF7807D2TRPBF IRF7807D2PBFTR-
ND		 IRF7807D2TRPBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807D2PBFTR-ND Datasheet
IRF7807D1TRPBF IRF7807D1PBFTR-
ND		 IRF7807D1TRPBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807D1PBFTR-ND Datasheet
NTHS2101PT1G NTHS2101PT1GOST
R-ND		 NTHS2101PT1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 8V
 Current - Continuous Drain (Id) @ 25C: 5.4A (Tj)
 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
 Vgs (Max): 8V
 Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 6.4V
 Power Dissipation (Max): 1.3W (Ta)
 Mounting Type: Surface Mount
 Supplier Device Package: ChipFET
 Package / Case: 8-SMD, Flat Lead
1000
Order

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 NTHS2101PT1GOSTR-ND Datasheet
DMP3025LK3-13 DMP3025LK3-13DI
TR-ND		 DMP3025LK3-13 Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 10.6A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V
 Power Dissipation (Max): 2.15W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TO-252-3
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
Order

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 DMP3025LK3-13DITR-ND Datasheet
BSL302SNL6327HTSA1 BSL302SNL6327HT
SA1TR-ND		 BSL302SNL6327HT
SA1		 Infineon Technologies
View more  Series: OptiMOS
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 7.1A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
 Vgs(th) (Max) @ Id: 2V @ 30A
 Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
 Power Dissipation (Max): 2W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PG-TSOP6-6
 Package / Case: SOT-23-6 Thin, TSOT-23-6
1000
Order

1+:

$0

 BSL302SNL6327HTSA1TR-ND Datasheet
EPC2010 917-1016-2-ND EPC2010 EPC
View more  Series: eGaN
 Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: GaNFET (Gallium Nitride)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 12A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
 Vgs(th) (Max) @ Id: 2.5V @ 3mA
 Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
 Vgs (Max): +6V, -4V
 Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
 Operating Temperature: -40C ~ 125C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: Die
 Package / Case: Die
1000
Order

1+:

$0

 917-1016-2-ND Datasheet
AO4452 785-1200-2-ND AO4452 Alpha & Omega Semiconductor Inc.
View more  Series: SDMOS
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 8A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 Vgs (Max): 25V
 Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
 Power Dissipation (Max): 3.1W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SOIC
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
3
Order

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 785-1200-2-ND Datasheet
IRF7807ATRPBF IRF7807ATRPBFTR
-ND		 IRF7807ATRPBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807ATRPBFTR-ND Datasheet
SI4486EY-T1-GE3 SI4486EY-T1-GE3
-ND		 SI4486EY-T1-GE3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 5.4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
 Vgs(th) (Max) @ Id: 2V @ 250A (Min)
 Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
 Vgs (Max): 20V
 Power Dissipation (Max): 1.8W (Ta)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 SI4486EY-T1-GE3-ND Datasheet
SI5485DU-T1-GE3 SI5485DU-T1-GE3
-ND		 SI5485DU-T1-GE3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
 Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerPAK ChipFet Single
 Package / Case: PowerPAK ChipFET Single
1000
Order

1+:

$0

 SI5485DU-T1-GE3-ND Datasheet
SI9424BDY-T1-GE3 SI9424BDY-T1-GE
3-ND		 SI9424BDY-T1-GE
3		 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 5.6A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
 Vgs(th) (Max) @ Id: 850mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
 Vgs (Max): 9V
 Power Dissipation (Max): 1.25W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 SI9424BDY-T1-GE3-ND Datasheet
NTMS5838NLR2G NTMS5838NLR2GOS
TR-ND		 NTMS5838NLR2G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 40V
 Current - Continuous Drain (Id) @ 25C: 5.8A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
 Power Dissipation (Max): 1.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SOIC
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 NTMS5838NLR2GOSTR-ND Datasheet
SFT1431-TL-E SFT1431-TL-E-ND SFT1431-TL-E ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 35V
 Current - Continuous Drain (Id) @ 25C: 11A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
 Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
 Power Dissipation (Max): 1W (Ta), 15W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TP-FA
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
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1+:

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 SFT1431-TL-E-ND Datasheet
NP20P04SLG-E1-AY NP20P04SLG-E1-A
Y-ND		 NP20P04SLG-E1-A
Y		 Renesas Electronics America
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 40V
 Current - Continuous Drain (Id) @ 25C: 20A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V
 Vgs(th) (Max) @ Id: 2.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
 Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
 Operating Temperature: 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TO-252 (MP-3ZK)
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
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 NP20P04SLG-E1-AY-ND Datasheet
TPCC8067-H,LQ(S TPCC8067-HLQ(S-
ND		 TPCC8067-H,LQ(S Toshiba Semiconductor and Storage
View more  Series: U-MOSVII-H
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 9A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V
 Vgs(th) (Max) @ Id: 2.3V @ 100A
 Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
 Power Dissipation (Max): 700mW (Ta), 15W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-TSON Advance (3.3x3.3)
 Package / Case: 8-PowerVDFN
1000
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 TPCC8067-HLQ(S-ND Datasheet
MTB50P03HDLG MTB50P03HDLGOS-
ND		 MTB50P03HDLG ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 50A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
 Vgs (Max): 15V
 Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
 Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D2PAK
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
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 MTB50P03HDLGOS-ND Datasheet
SI4486EY-T1-E3 SI4486EY-T1-E3T
R-ND		 SI4486EY-T1-E3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 5.4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.9A, 10V
 Vgs(th) (Max) @ Id: 2V @ 250A (Min)
 Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
 Vgs (Max): 20V
 Power Dissipation (Max): 1.8W (Ta)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 SI4486EY-T1-E3TR-ND Datasheet
SI5485DU-T1-E3 SI5485DU-T1-E3T
R-ND		 SI5485DU-T1-E3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 12A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
 Vgs(th) (Max) @ Id: 1.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
 Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PowerPAK ChipFet Single
 Package / Case: PowerPAK ChipFET Single
1000
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1+:

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 SI5485DU-T1-E3TR-ND Datasheet
SI9424BDY-T1-E3 SI9424BDY-T1-E3
TR-ND		 SI9424BDY-T1-E3 Vishay Siliconix
View more  Series: TrenchFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 5.6A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
 Vgs(th) (Max) @ Id: 850mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
 Vgs (Max): 9V
 Power Dissipation (Max): 1.25W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 SI9424BDY-T1-E3TR-ND Datasheet
IRFS59N10DTRRP IRFS59N10DTRRP-
ND		 IRFS59N10DTRRP Infineon Technologies
View more  Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 59A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
 Vgs(th) (Max) @ Id: 5.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
 Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D2PAK
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
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1+:

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 IRFS59N10DTRRP-ND Datasheet
IXFM67N10 IXFM67N10-ND IXFM67N10 IXYS
View more  Series: HiPerFET
 Part Status: Last Time Buy
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 67A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 4mA
 Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
 Power Dissipation (Max): 300W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-204AE
 Package / Case: TO-204AE
1000
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 IXFM67N10-ND Datasheet
IXTM67N10 IXTM67N10-ND IXTM67N10 IXYS
View more  Series: GigaMOS
 Part Status: Last Time Buy
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 67A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 4mA
 Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
 Power Dissipation (Max): 300W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-204AE
 Package / Case: TO-204AE
1000
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 IXTM67N10-ND Datasheet
AON6452L AON6452L-ND AON6452L Alpha & Omega Semiconductor Inc.
View more  Series: SDMOS
 Part Status: Last Time Buy
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 6.5A (Ta), 26A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 Vgs (Max): 25V
 Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
 Power Dissipation (Max): 2W (Ta), 35W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-DFN-EP (5x6)
 Package / Case: 8-PowerVDFN
1000
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 AON6452L-ND Datasheet
MVB50P03HDLT4G MVB50P03HDLT4G-
ND		 MVB50P03HDLT4G ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Part Status: Last Time Buy
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 50A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
 Vgs (Max): 15V
 Input Capacitance (Ciss) (Max) @ Vds: 4.9nF @ 25V
 Power Dissipation (Max): 125W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D2PAK-3
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
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 MVB50P03HDLT4G-ND Datasheet
ECH8315-TL-W ECH8315-TL-W-ND ECH8315-TL-W ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 7.5A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V
 Vgs(th) (Max) @ Id: 2.6V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
 Power Dissipation (Max): 1.5W (Ta)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-28FL/ECH8
 Package / Case: 8-SMD, Flat Lead
1000
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 ECH8315-TL-W-ND Datasheet
SFT1431-TL-W SFT1431-TL-W-ND SFT1431-TL-W ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 35V
 Current - Continuous Drain (Id) @ 25C: 11A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.5A, 10V
 Vgs(th) (Max) @ Id: 2.6V @ 1mA
 Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 20V
 Power Dissipation (Max): 1W (Ta), 15W (Tc)
 Operating Temperature: 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DPAK/TP-FA
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
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 SFT1431-TL-W-ND Datasheet
AOB414_001 AOB414_001-ND AOB414_001 Alpha & Omega Semiconductor Inc.
View more  Series: SDMOS
 Packaging: Bulk
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 6.6A (Ta), 51A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 Vgs (Max): 25V
 Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
 Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: TO-263 (DPak)
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
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 AOB414_001-ND Datasheet
ZXMN3A02N8TC ZXMN3A02N8TC-ND ZXMN3A02N8TC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 7.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
 Power Dissipation (Max): 1.56W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 ZXMN3A02N8TC-ND Datasheet