IRF7807VD1TRPBF Allicdata Electronics
Allicdata Part #:

IRF7807VD1PBFTR-ND

Manufacturer Part#:

IRF7807VD1TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.3A 8-SOIC
More Detail: N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7807VD1TRPBF datasheetIRF7807VD1TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7807VD1TRPBF is a type of field effect transistor (FET) used in many electronic circuits. It is a single-gate FET, meaning that it contains just one gate terminal and is commonly used in switching and amplifying circuits. This type of transistor is a popular choice among electronics hobbyists due to its low power consumption and high power handling capabilities. In this article, we will take a closer look at the application field and working principle of this device.

The IRF7807VD1TRPBF is widely used in switching and amplifying applications. The device is ideal for applications where low-voltage signals are needed, such as in automotive, medical, and communication applications. Its low on-resistance allows it to switch load currents up to 600 mA, making it suitable for most low-power applications. It is also relatively fast, with a switching time of less than 10 ns. This makes it a great choice for high-frequency operation.

The device operates by controlling the voltage applied to the gate terminal. When the voltage is high, current flows through the channel, allowing it to be switched on. When the voltage is low, the channel is blocked, preventing current flow. This type of transistor is known as an enhancement mode device, meaning that it must be switched on before any current can flow through it. This makes it a great choice for applications requiring low power consumption.

The working principle of this device involves the carrier injection principle. When a voltage is applied to the gate, it induces an electric field in the channel, which causes carriers (electrons and holes) to be injected into the channel. These carriers reduce the resistance of the channel, allowing current to flow through the device. This is known as the pinch-off effect, and it is a fundamental principle of field effect transistors. The strength of the current flow is determined by the gate voltage, allowing the device to be used as a switch or an amplifier.

The IRF7807VD1TRPBF is a versatile device and can be used in a wide range of applications. Its low power consumption and high power handling make it a great choice for low-voltage applications. Its fast switching time makes it well-suited for high-frequency operation. Its channel pinch-off effect allows it to be used as either a switch or an amplifier, making it a great choice for any application requiring low- voltage signals.

The specific data is subject to PDF, and the above content is for reference

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