ZXMN3A02N8TC

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ZXMN3A02N8TC Application Field and Working Principle

The ZXMN3A02N8TC is a dual N-channel enhancement mode Field-Effect Transistor (FET) designed for high voltage, high speed power switching applications, such as DC/DC conversion and motor control.

This silicon-based transistor is constructed with N-channel enhancement mode transistors and with high dV/dt capability, low gate charge and fast switching speeds it is suitable for use in a variety of power switching applications. The ZXMN3A02N8TC uses a specialized SZGMOS process to provide improved transconductance, low power dissipation and high immunity to latch-up.

The ZXMN3A02N8TC can be used as a replacement for a variety of bipolar and MOSFET transistors, including the popular 2N7002, UDN2593A, and IRLI2203/N-Channel MOSFET. The ZXMN3A02N8TC is available in a space-saving SOT-23 package, making it suitable for a number of surface-mount applications.

Working Principle

The working principle of the ZXMN3A02N8TC is based on the use of the Gate-Source voltage (VGS) to control its conduction between the drain and the source. When VGS is greater than the threshold voltage (Vth), the ZXMN3A02N8TC turns on and conducts current between Drain and Source. This type of transistor is commonly referred to as an enhancement mode device.

The ZXMN3A02N8TC is characterized for operation over an extended temperature range from -55°C to 125°C and is rated for up to 60V. It can handle a pulsed drain current up to 5.8A with a maximum power dissipation of 2W. It has an ON-resistance (Rdson) of 2.6 Ohms at 4.5V and a maximum of 7 Ohms at 25°C. The ZXMN3A02N8TC has a very fast switching speed, typically rising and falling times of 5ns/3.5ns.

The ZXMN3A02N8TC is a common choice for use in a wide variety of circuit applications including motor controllers, DC/DC converters, power switches, and more. It is important to note that the device should be operated within its specified ratings to ensure reliable operation.

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