IRF7807VTR Allicdata Electronics
Allicdata Part #:

IRF7807VTR-ND

Manufacturer Part#:

IRF7807VTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.3A 8-SOIC
More Detail: N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7807VTR datasheetIRF7807VTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7807VTR is an N-Channel MOSFET product from Infineon Technologies which includes advanced features, high strength, and is a cost-effective component for various applications. The IRF7807VTR is a device specifically designed for general purpose applications and can handle up to 120V drain-source voltage and 7.5A drain current. It is one of the fastest switching (30V/ns) devices in its class and is also designed to survive extremely high dV/dt and di/dt. This product is ideal for switching applications in low voltage systems where synchronization and a fast turn-on/turn-off time is required.

The IRF7807VTR is a single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) and is used in many applications. It is an ultra-fast switching device ideal for high frequency switching operations such as brushless DC motor control, power-factor correction (PFC) control, DC-DC converters, snubber circuits, and general purpose switching applications. This device has a very low gate threshold voltage which allows it to handle very low gate voltages and is suitable for driver circuits. Also, its high current handling capability makes it suitable for load applications as well.

The IRF7807VTR’s working principle is based on the MOSFET’s operation, which is the mainstay of power electronics. It is a blocking mode device which means that it can block current flow from the source to the drain when the gate is at zero volts. When the gate-source voltage is equal to or higher than the threshold voltage, the device will turn on and current flow can pass through it. This is due to a phenomena known as the “inversion layer”, which is a thin conducting channel that forms between the source and the drain when a MOSFET is in forward conduction.

In normal operation of the IRF7807VTR device, the gate-source voltage must be higher than the threshold voltage (Vgs > Vth) to turn on the device. The gate-source voltage must also be lower than the maximum voltage (Vgs max) for the device to remain in its forward conduction mode. The drain-source voltage (Vds) must be below the maximum voltage rating for the device to remain in its specified operation. The drain-source current (Ids) must also be below the maximum current rating for the device to remain in its specified operating range.

The IRF7807VTR is used in a variety of applications and is a reliable, cost-effective device for general purpose applications. It can be used for high frequency switching applications such as for brushless DC motor control, power-factor correction control, and DC-DC converters. Furthermore, its low gate threshold voltage allows it to be used in driver circuits, while its high current handling capability makes it suitable in load applications as well.

In addition, the IRF7807VTR’s fast turn-on and turn-off time makes it ideal for synchronization, while its high dV/dt and di/dt survivability makes it a robust device. This makes the IRF7807VTR a versatile, reliable, and cost-effective device for many applications.

The specific data is subject to PDF, and the above content is for reference

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