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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
ZXMN3A02X8TA ZXMN3A02X8TR-ND ZXMN3A02X8TA Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 5.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
 Power Dissipation (Max): 1.1W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-MSOP
 Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
1000
Order

1+:

$0

 ZXMN3A02X8TR-ND Datasheet
ZXMN3A02X8TC ZXMN3A02X8TC-ND ZXMN3A02X8TC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 5.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
 Power Dissipation (Max): 1.1W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-MSOP
 Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
1000
Order

1+:

$0

 ZXMN3A02X8TC-ND Datasheet
ZXMN3A02N8TA ZXMN3A02N8TR-ND ZXMN3A02N8TA Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 7.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
 Power Dissipation (Max): 1.56W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 ZXMN3A02N8TR-ND Datasheet
ZVP2120A ZVP2120A-ND ZVP2120A Diodes Incorporated
View more  Packaging: Bulk
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 120mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
 Power Dissipation (Max): 700mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-92-3
 Package / Case: TO-226-3, TO-92-3 (TO-226AA)
1000
Order

1+:

$0

 ZVP2120A-ND Datasheet
IXFH67N10 IXFH67N10-ND IXFH67N10 IXYS
View more  Series: HiPerFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 67A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 33.5A, 10V
 Vgs(th) (Max) @ Id: 4V @ 4mA
 Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
 Power Dissipation (Max): 300W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-247AD (IXFH)
 Package / Case: TO-247-3
1000
Order

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$0

 IXFH67N10-ND Datasheet
NDB6060 NDB6060TR-ND NDB6060 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 24A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
 Power Dissipation (Max): 100W (Tc)
 Operating Temperature: -65C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DPAK (TO-263AB)
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
Order

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 NDB6060TR-ND Datasheet
IRF7807 IRF7807-ND IRF7807 Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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$0

 IRF7807-ND Datasheet
IRF7807D1 IRF7807D1-ND IRF7807D1 Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Tc)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807D1-ND Datasheet
IRF7807D2 IRF7807D2-ND IRF7807D2 Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807D2-ND Datasheet
IRF7807TR IRF7807TR-ND IRF7807TR Infineon Technologies
View more  Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807TR-ND Datasheet
IRFSL59N10D IRFSL59N10D-ND IRFSL59N10D Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 59A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
 Vgs(th) (Max) @ Id: 5.5V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
 Vgs (Max): 30V
 Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
 Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-262
 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA
1000
Order

1+:

$0

 IRFSL59N10D-ND Datasheet
IRF7807D1PBF IRF7807D1PBF-ND IRF7807D1PBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807D1PBF-ND Datasheet
IRF7807D2PBF IRF7807D2PBF-ND IRF7807D2PBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807D2PBF-ND Datasheet
IRF7807PBF IRF7807PBF-ND IRF7807PBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Tc)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807PBF-ND Datasheet
IRF7807VD1PBF IRF7807VD1PBF-N
D		 IRF7807VD1PBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 IRF7807VD1PBF-ND Datasheet
IRF7807VD2PBF IRF7807VD2PBF-N
D		 IRF7807VD2PBF Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VD2PBF-ND Datasheet
IRF7807VPBF IRF7807VPBF-ND IRF7807VPBF Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Discontinued at Digi-Key
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 3V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
 Vgs (Max): 20V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807VPBF-ND Datasheet
MTP50P03HDLG MTP50P03HDLGOS-
ND		 MTP50P03HDLG ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 50A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
 Vgs (Max): 15V
 Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
 Power Dissipation (Max): 125W (Tc)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220AB
 Package / Case: TO-220-3
1000
Order

1+:

$0

 MTP50P03HDLGOS-ND Datasheet
ZVN3320ASTOB ZVN3320ASTOB-ND ZVN3320ASTOB Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 100mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
 Vgs(th) (Max) @ Id: 3V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
 Power Dissipation (Max): 625mW (Ta)
 Mounting Type: Through Hole
 Supplier Device Package: E-Line (TO-92 compatible)
 Package / Case: E-Line-3
1000
Order

1+:

$0

 ZVN3320ASTOB-ND Datasheet
ZVN3320ASTZ ZVN3320ASTZ-ND ZVN3320ASTZ Diodes Incorporated
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 100mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
 Vgs(th) (Max) @ Id: 3V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
 Power Dissipation (Max): 625mW (Ta)
 Mounting Type: Through Hole
 Supplier Device Package: E-Line (TO-92 compatible)
 Package / Case: E-Line-3
1000
Order

1+:

$0

 ZVN3320ASTZ-ND Datasheet
ZVN3320FTC ZVN3320FTC-ND ZVN3320FTC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 60mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
 Vgs(th) (Max) @ Id: 3V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
 Power Dissipation (Max): 330mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-23-3
 Package / Case: TO-236-3, SC-59, SOT-23-3
1000
Order

1+:

$0

 ZVN3320FTC-ND Datasheet
ZVP2120ASTOA ZVP2120ASTOA-ND ZVP2120ASTOA Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 120mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
 Power Dissipation (Max): 700mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: E-Line (TO-92 compatible)
 Package / Case: E-Line-3
1000
Order

1+:

$0

 ZVP2120ASTOA-ND Datasheet
ZVP2120ASTOB ZVP2120ASTOB-ND ZVP2120ASTOB Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 120mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 1mA
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
 Power Dissipation (Max): 700mW (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: E-Line (TO-92 compatible)
 Package / Case: E-Line-3
1000
Order

1+:

$0

 ZVP2120ASTOB-ND Datasheet
ZVP2120GTC ZVP2120GTC-ND ZVP2120GTC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 200V
 Current - Continuous Drain (Id) @ 25C: 200mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
 Vgs(th) (Max) @ Id: 3.5V @ 1mA
 Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
 Power Dissipation (Max): 2W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: SOT-223
 Package / Case: TO-261-4, TO-261AA
1000
Order

1+:

$0

 ZVP2120GTC-ND Datasheet
ZXM66P02N8TC ZXM66P02N8TC-ND ZXM66P02N8TC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 6.4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V
 Vgs(th) (Max) @ Id: 700mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 43.3nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 2068pF @ 15V
 Power Dissipation (Max): 1.56W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 ZXM66P02N8TC-ND Datasheet
ZXMN3B04N8TC ZXMN3B04N8TC-ND ZXMN3B04N8TC Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 7.2A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.2A, 4.5V
 Vgs(th) (Max) @ Id: 700mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 15V
 Power Dissipation (Max): 2W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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 ZXMN3B04N8TC-ND Datasheet
HUFA75429D3ST HUFA75429D3ST-N
D		 HUFA75429D3ST ON Semiconductor
View more  Series: UltraFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 60V
 Current - Continuous Drain (Id) @ 25C: 20A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
 Power Dissipation (Max): 125W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: D-Pak
 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
1000
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 HUFA75429D3ST-ND Datasheet
NDP6030PL NDP6030PL-ND NDP6030PL ON Semiconductor
View more  Packaging: Tube
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 30A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 19A, 10V
 Vgs(th) (Max) @ Id: 2V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
 Vgs (Max): 16V
 Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 15V
 Power Dissipation (Max): 75W (Tc)
 Operating Temperature: -65C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220
 Package / Case: TO-220-3
1000
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 NDP6030PL-ND Datasheet
HUF75639S3S HUF75639S3S-ND HUF75639S3S ON Semiconductor
View more  Series: UltraFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 56A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
 Power Dissipation (Max): 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DPAK (TO-263AB)
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
Order

--

 HUF75639S3S-ND Datasheet
HUFA75639P3 HUFA75639P3-ND HUFA75639P3 ON Semiconductor
View more  Series: UltraFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 56A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
 Power Dissipation (Max): 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-220AB
 Package / Case: TO-220-3
1000
Order

1+:

$0

 HUFA75639P3-ND Datasheet
HUFA75639S3S HUFA75639S3S-ND HUFA75639S3S ON Semiconductor
View more  Series: Automotive, AEC-Q101, UltraFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 56A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
 Power Dissipation (Max): 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: DPAK (TO-263AB)
 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
1000
Order

1+:

$0

 HUFA75639S3S-ND Datasheet
HUFA75639G3 HUFA75639G3-ND HUFA75639G3 ON Semiconductor
View more  Series: UltraFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 56A (Tc)
 Drive Voltage (Max Rds On, Min Rds On): 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
 Vgs(th) (Max) @ Id: 4V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
 Power Dissipation (Max): 200W (Tc)
 Operating Temperature: -55C ~ 175C (TJ)
 Mounting Type: Through Hole
 Supplier Device Package: TO-247-3
 Package / Case: TO-247-3
1000
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1+:

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 HUFA75639G3-ND Datasheet
BSP324 E6327 BSP324E6327-ND BSP324 E6327 Infineon Technologies
View more  Series: SIPMOS
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 400V
 Current - Continuous Drain (Id) @ 25C: 170mA (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V
 Vgs(th) (Max) @ Id: 2.3V @ 94A
 Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V
 Power Dissipation (Max): 1.8W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: PG-SOT223-4
 Package / Case: TO-261-4, TO-261AA
1000
Order

1+:

$0

 BSP324E6327-ND Datasheet
IRF7807D1TR IRF7807D1TR-ND IRF7807D1TR Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
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--

 IRF7807D1TR-ND Datasheet
IRF7807D2TR IRF7807D2TR-ND IRF7807D2TR Infineon Technologies
View more  Series: FETKY
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Tc)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

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 IRF7807D2TR-ND Datasheet
ZXM66P02N8TA ZXM66P02N8TR-ND ZXM66P02N8TA Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 20V
 Current - Continuous Drain (Id) @ 25C: 6.4A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V
 Vgs(th) (Max) @ Id: 700mV @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 43.3nC @ 4.5V
 Vgs (Max): 12V
 Input Capacitance (Ciss) (Max) @ Vds: 2068pF @ 15V
 Power Dissipation (Max): 1.56W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

--

 ZXM66P02N8TR-ND Datasheet
ZXM66P03N8TA ZXM66P03N8TR-ND ZXM66P03N8TA Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: P-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 6.25A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.6A, 10V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
 Vgs (Max): 20V
 Input Capacitance (Ciss) (Max) @ Vds: 1979pF @ 25V
 Power Dissipation (Max): 1.56W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

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 ZXM66P03N8TR-ND Datasheet
IRF7807A IRF7807A-ND IRF7807A Infineon Technologies
View more  Series: HEXFET
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

$0

 IRF7807A-ND Datasheet
IRF7807VD2 IRF7807VD2-ND IRF7807VD2 Infineon Technologies
View more  Series: FETKY
 Packaging: Tube
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
 Vgs (Max): 20V
 FET Feature: Schottky Diode (Isolated)
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

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 IRF7807VD2-ND Datasheet
IRF7807ATR IRF7807ATR-ND IRF7807ATR Infineon Technologies
View more  Series: HEXFET
 Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 FET Type: N-Channel
 Technology: MOSFET (Metal Oxide)
 Drain to Source Voltage (Vdss): 30V
 Current - Continuous Drain (Id) @ 25C: 8.3A (Ta)
 Drive Voltage (Max Rds On, Min Rds On): 4.5V
 Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
 Vgs(th) (Max) @ Id: 1V @ 250A
 Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
 Vgs (Max): 12V
 Power Dissipation (Max): 2.5W (Ta)
 Operating Temperature: -55C ~ 150C (TJ)
 Mounting Type: Surface Mount
 Supplier Device Package: 8-SO
 Package / Case: 8-SOIC (0.154", 3.90mm Width)
1000
Order

1+:

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 IRF7807ATR-ND Datasheet