Allicdata Part #: | AON6452L-ND |
Manufacturer Part#: |
AON6452L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 8DFN |
More Detail: | N-Channel 100V 6.5A (Ta), 26A (Tc) 2W (Ta), 35W (T... |
DataSheet: | AON6452L Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DFN-EP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 50V |
Vgs (Max): | ±25V |
Series: | SDMOS™ |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta), 26A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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AON6452L is a single N-channel enhancement mode Field-Effect Transistor (FET) which is produced by the advanced Power MOSFET process technology and chip design. AON6452L is specifically designed for low Vds (switching) applications with fast switching times and low resistance.
The maximum source-drain voltage of AON6452L is 30V, and the maximum drain current is reached to 45A. AON6452L also features a very fast switching speed and low input capacitance, thus providing an extra advantage in high-speed applications. The maximum junction temperature can reach up to 150°C and the thermal resistance is Rth=2.2K/W.
The most common application of AON6452L is a switching regulator, which can provide power efficiency in applications such as DC/DC converters and LED drivers. AON6452L can also be used as an ON/OFF switch in high frequency power switching applications, such as automotive headlights, body computers, and aerospace applications.
AON6452L\'s main working principle is based on a voltage-controlled semiconductor with metal–oxide–semiconductor technology. This semiconductor includes three main components – the source, gate and drain. The source is the negative terminal, whereas gate is the control terminal, and drain is the positive terminal. The operation of AON6452L is based on the voltage difference between gate and source, which modulates the current flow between the source and drain. When there\'s a high positive voltage applied to the gate of AON6452L, electrons are attracted and move through the oxide layer, allowing current to flow and the FET to be turned on.
When there\'s a negative voltage (of same magnitude or lower than source voltage) applied to the gate, electrons are repelled and the FET will be turned off. The voltage applied to the gate creates an electric field in the oxide layer which acts as a gate dielectric, controlling the transistor\'s operation. The AON6452L offers fast switching times, low ON-resistance, low voltage drop and low input capacitance. As a result, it is well suited for power switching, logic level shift, and static load switching.
AON6452L is an ideal choice for power switching applications, allowing for low loss power conversion, excellent efficiency and high speed switching performance. It is also suitable for use in automotive, LED lighting, home and networking products, ITE (industrial, telecom, and medical), and other consumer electronics.
Overall, AON6452L is a great choice for fast switching speed and low power consumption, making it ideal for a variety of applications. It features very low on-resistance, low voltage drop, and low input capacitance, providing a great choice for power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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