Allicdata Part #: | IRFU3412PBF-ND |
Manufacturer Part#: |
IRFU3412PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 48A I-PAK |
More Detail: | N-Channel 100V 48A (Tc) 140W (Tc) Through Hole IPA... |
DataSheet: | IRFU3412PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3430pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFU3412PBF Application Field and Working Principle
The IRFU3412PBF is a N-channel power metal-oxide semiconductor field-effect transistor (MOSFET) designed for extreme load switching and performance applications. It belongs to the Transistors - FETs, MOSFETs - Single category. This MOSFET offers users optimal drain-source breakdown voltage, drain current rating and total gate charge. It is widely used in H-bridge driver circuits, automotive applications, high performance power switching systems and fuel injector driver circuits.
The IRFU3412PBF is controlled by a small gate-source voltage, and can turn on/off a large amount of current. Its maximum drain current is 108 A, maximum drain-source breakdown voltage is 100 V and maximum gate-source voltage is 20 V. This MOSFET can easily handle high voltage and current conditions, making it ideal for load switching and performance applications.
The working principle of the IRFU3412PBF is based on the fact that the amount of current flowing through the channel is dependent on the voltage applied across the gate-source terminals of the MOSFET. When a positive voltage is applied on the Gate, the channel is opened and current flows between the source and drain. The same thing happens when the gate is negative, but instead of current flowing from the source to the drain, it flows from the drain to the source.
When no voltage is applied on the gate, no current flows and the MOSFET remains off; this is called the "off-state". When a positive voltage is applied on the gate, the channel is opened and current flows; this is called the "on-state". This is the basic working principle of a MOSFET.
The IRFU3412PBF MOSFET offers excellent power performance, low power consumption, and good EMI/RFI performance. Furthermore, it also has very low power dissipation, and it is capable of operating at high frequencies. It is also highly reliable and has a long lifetime, making it ideal for extreme load switching and performance applications.
In conclusion, the IRFU3412PBF MOSFET is an ideal choice for high performance power switching systems and fuel injector drivers. It offers users an excellent performance, low power consumption, good EMI/RFI performance, and low power dissipation. This MOSFET is highly reliable and has a long lifetime, making it ideal for extreme load switching and performance applications.
The specific data is subject to PDF, and the above content is for reference
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