IRF7807VD1TR Allicdata Electronics
Allicdata Part #:

IRF7807VD1TR-ND

Manufacturer Part#:

IRF7807VD1TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 8.3A 8-SOIC
More Detail: N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7807VD1TR datasheetIRF7807VD1TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF7807VD1TR is a trench MOSFET that belongs to the Single category of FETs and MOSFETs. It is relatively new to the market, but it is quickly gaining attention due to its wide range of application fields and its encouraging working principle.IRF7807VD1TR is a lateral-double diffused MOSFET, meaning it is composed of two independent diffusion processes. This allows the device to be more resistant to secondary breakdown and it also makes it suitable for high-power applications.In terms of its application fields, the IRF7807VD1TR can be used in a variety of different contexts. It is suitable for switching applications where it can be used as both a low-side and a high-side switch. It is also suitable for power supply and motor control applications, as well as various audio applications. In terms of its working principle, the IRF7807VD1TR is a unidirectional device, meaning that it only allows electrical energy to flow from its source to its drain region. This is achieved by having a gate, or an electrically charged region, between the source and the drain regions, which can allow or block the flow of current. This gate voltage can be generated either by an external voltage source, or by the device itself, in which case the gate voltage is known as self-generated voltage.The IRF7807VD1TR has a wide range of maximum voltage and current ratings. The maximum drain-source voltage is 500V, while the maximum drain current is 3A and the maximum gate-source voltage is 5V.The IRF7807VD1TR is a relatively new device, but its wide range of potential applications and its working principle make it a promising device for various power and switching applications. Its maximum ratings make it suitable for high-power applications, and the double diffusion process makes it resistant to secondary breakdown. Its unidirectional nature makes it suitable for various switching applications, and its gate voltage can be controlled both by external sources and by the device itself. All in all, the IRF7807VD1TR is a promising device for various power and switching applications, and is likely to become more widely used in the near future.

The specific data is subject to PDF, and the above content is for reference

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