SI5485DU-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI5485DU-T1-GE3 is a high power silicon insulated gate bipolar transistor (IGBT) module used in a variety of application fields. The n-channel IGBT provides a low loss switch with superior thermal performance. This device is one of the most popular IGBTs in the market and can be found in a wide variety of applications.

This device has a collector to emitter voltage rating of 600 V, a collector current handling of up to 450 A and a low on-state saturation voltage of just 0.7 V. The integrated package of the device allows it to be used in high-power applications. This device can be used in motor control applications such as AC motor drives, DC motor drives, inverters and PWM motor controllers.

The SI5485DU-T1-GE3 is also suitable for high voltage DC-DC converters, UPS systems, solar inverters and DC link applications. The device is designed to ensure fast switching with low input capacitance and low switching losses, while providing superior junction-temperature protection.

The working principle behind this device is based on a depletion mode silicon insulated gate bipolar transistor structure. An n-type semiconductor is used to form an insulated gate and a p-type region between the gate and the collector. When an electric current is applied to the gate, it creates a depletion region which decreases the resistance between the gate and the collector, thus allowing for a low resistance path for current flow.

When voltage is applied across the collector and emitter, an electric current flows from the collector to the emitter and is controlled by the gate voltage. This allows for a simpler drive circuitry compared to a traditional bipolar transistor and allows for higher efficiency in power transfer. The gate insulation also provides better temperature stability, even when operating at high temperatures.

The SI5485DU-T1-GE3 is an ideal choice for a variety of applications due to its high power handling capabilities, low on-state saturation voltage and fast switching times. Its integrated package ensures that the device is reliable and easy to install in hard to reach locations. The depletion mode structure of the device ensures that it operates with low input capacitance and low switching losses and that the device remains temperature stable even when operating at high temperatures.

The specific data is subject to PDF, and the above content is for reference