Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	785pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.8A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NTMS5838NLR2G Application Field and Working Principle

The NTMS5838NLR2G is a high-performance enhancement-mode GaN transistor that is especially suitable for high-efficiency and high frequency power conversion applications. It is an innovative product released by N-Trans Technology, and it has rapidly become popular among power system engineers. In this article, we will discuss the application field and working principle of the NTMS5838NLR2G.

Application Field of the NTMS5838NLR2G

The NTMS5838NLR2G is a high-performance GaN transistor and is mainly used in power conversion applications such as DC-DC converters, AC-DC converters, inverters, and battery charging solutions. It offers superior performance in comparison to conventional Silicon transistors, making it the ideal choice for high-efficiency and high frequency designs. It has a maximum breakdown voltage of 600V and a maximum on-state resistance of 250 mΩ, allowing the user to get the most power conversion efficiency from their designs.The NTMS5838NLR2G is also suitable for high-speed switching applications, such as in high-speed optical sensing, digital data transfer, and in high-speed motor drives. Thanks to its high-speed switching capability, it can reduce switching losses and provide high data transfer speeds. Additionally, its small package size allows the user to design more compact and efficient designs, reducing overall system size and cost.

Working Principle of the NTMS5838NLR2G

The NTMS5838NLR2G is an enhancement-mode GaN transistor, which means that it does not require any external gates to turn on the transistor. It uses a simple parallel resistor network to drive the intrinsic gate voltage of the GaN device to its threshold voltage. As the voltage across the internal drain-source terminals of the device increases, it causes the internal gate-source and gate-drain voltages to rise, which turns on the transistor.When the external drain-source voltage is removed, the internal gate-source and gate-drain voltages fall, which turns off the transistor. Then the resistor network pulls the internal gate voltage back to its zero voltage state, thus turning the device off again. This is the basic principle of operation of the NTMS5838NLR2G transistor.

Conclusion

The NTMS5838NLR2G is a high-performance enhancement-mode GaN transistor that is suitable for use in high-efficiency and high frequency power conversion applications. It features a maximum breakdown voltage of 600V and a maximum on-state resistance of 250 mΩ, making it the ideal choice for power systems engineers. Its high-speed switching capability and compact package size make it an excellent choice for high-speed optical sensing, digital data transfer, and in high-speed motor drives. In addition, its simple parallel resistor network turns on and off the transistor with ease, allowing for easy control of energy conversion.

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