Cap alum 120uf 20% 50v thru hole - Allicdata Electronics

Related Categories

< 1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RFD15P05-ND	RFD15P05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
RFD16N05-ND	RFD16N05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 72W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
RFD8P05-ND	RFD8P05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Vgs (Max): 20V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
RFG60P05E-ND	RFG60P05E	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 450nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power Dissipation (Max): 215W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
RFP15P05-ND	RFP15P05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRFZ30PBF-ND	IRFZ30PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
FKV575-ND	FKV575	Sanken	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	2778 Order	1+: $2.1294 10+: $1.902 100+: $1.5595 500+: $1.2628 1000+: $1.065
IRFU9010PBF-ND	IRFU9010PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1250 Order	--
IRFZ20PBF-ND	IRFZ20PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1829 Order	--
RFD14N05L-ND	RFD14N05L	ON Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Power Dissipation (Max): 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2969 Order	1+: $0.6489 10+: $0.5689 100+: $0.4388 500+: $0.325 1000+: $0.26
IXTP140P05T-ND	IXTP140P05T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Power Dissipation (Max): 298W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1998 Order	--
IRFU9020PBF-ND	IRFU9020PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	3000+: $0.5966
IRF9Z20-ND	IRF9Z20	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1000+: $0.81
IXTP48P05T-ND	IXTP48P05T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IXTH140P05T-ND	IXTH140P05T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Power Dissipation (Max): 298W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	--
2SK536-TB-EOSTR -ND	2SK536-TB-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power Dissipation (Max): 200mW (Ta) Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
SSM3K17FULFTR-N D	SSM3K17FU,LF	Toshiba Semiconductor and Storage	View more Series: -MOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1A Vgs (Max): 7V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	45000 Order	3000+: $0.04
ZVP4105A-ND	ZVP4105A	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
IRFD010-ND	IRFD010	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
ZVP4105ASTOA-ND	ZVP4105ASTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVP4105ASTOB-ND	ZVP4105ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Power Dissipation (Max): 625mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
IRFD010PBF-ND	IRFD010PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	--
IRFD9010PBF-ND	IRFD9010PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	3679 Order	1+: $0.945 10+: $0.836 100+: $0.6607 500+: $0.5124 1000+: $0.4045
IRFD020PBF-ND	IRFD020PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1337 Order	--
VN3205N3-G-ND	VN3205N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	24 Order	1+: $0.8064 25+: $0.6683 100+: $0.61
VN3205N3-G-P002 -ND	VN3205N3-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	2000+: $0.6489
IRFD9010-ND	IRFD9010	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1000 Order	2500+: $0.9292
NDB7050TR-ND	NDB7050	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
NDB7050LTR-ND	NDB7050L	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
RFD8P05SM-ND	RFD8P05SM	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
5LN01M-TL-E-ND	5LN01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	--
5LP01M-TL-E-ND	5LP01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	1+: $0
5LN01C-TB-EOSTR -ND	5LN01C-TB-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Power Dissipation (Max): 250mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
5HN01M-TL-E-ND	5HN01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	--
5HN01M-TL-H-ND	5HN01M-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	--
5HP01M-TL-E-ND	5HP01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 22 Ohm @ 40mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	--
5LN01C-TB-H-ND	5LN01C-TB-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Power Dissipation (Max): 250mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
5LN01S-TL-E-ND	5LN01S-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMCP Package / Case: SC-75, SOT-416	1000 Order	--
5LN01SS-TL-H-ND	5LN01SS-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Package / Case: SC-81	1000 Order	1+: $0
5LP01C-TB-E-ND	5LP01C-TB-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Power Dissipation (Max): 250mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--

< 1 2 3 4 5 >

Hot Searches: cap alum 120uf 20% 50v thru hole cap alum 120uf 20% 25v thru hole cap alum 120uf 20% 16v thru hole cap alum 120uf 20% 63v thru hole cap alum 120uf 20% 10v thru hole cap alum 120uf 20% 35v thru hole cap alum 0.1uf 20% 50v thru hole cap alum 4.7uf 20% 50v thru hole cap alum 22uf 20% 50v thru hole cap alum 1uf 20% 50v thru hole cap alum 10uf 20% 50v thru hole cap alum 220uf 20% 50v thru hole cap alum 470uf 20% 50v thru hole cap alum 2.2uf 20% 50v thru hole cap alum 47uf 20% 50v thru hole cap alum 3.3uf 20% 50v thru hole cap alum 6.8uf 20% 50v thru hole cap alum 15uf 20% 50v thru hole cap alum 27uf 20% 50v thru hole cap alum 1.5uf 20% 50v thru hole

Search Result:cap alum 120uf 20% 50v thru hole

Related Categories