IXTP140P05T Allicdata Electronics
Allicdata Part #:

IXTP140P05T-ND

Manufacturer Part#:

IXTP140P05T

Price: $ 4.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 50V 140A TO-220
More Detail: P-Channel 50V 140A (Tc) 298W (Tc) Through Hole TO-...
DataSheet: IXTP140P05T datasheetIXTP140P05T Datasheet/PDF
Quantity: 1998
1 +: $ 4.25880
10 +: $ 4.13104
100 +: $ 4.04586
1000 +: $ 3.96068
10000 +: $ 3.83292
Stock 1998Can Ship Immediately
$ 4.26
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTP140P05T Application Field and Working Principle

The IXTP140P05T is a single, N-Channel TrenchFET® power MOSFET from IXYS Corporation. As a power MOSFET, the IXTP140P05T is widely used in various power conversion applications such as Switching Power Supplies and DC-DC converters. It has a wide range of features that make it suitable for these applications, including: high current ratings, low on-resistance and a wide safe-operating area.

The IXTP140P05T is a TrenchFET® MOSFET and as such has been designed to offer specific advantages over other MOSFET types. It has a unique construction that allows it to deliver high current at low voltages, providing an efficient power solution. The trench gate structure of the IXTP140P05T helps to reduce on-state resistance and increase switching speed, allowing for faster switching and improved system efficiency.

The IXTP140P05T has a gate-to-source voltage rating of +/- 20V and a drain-to-source voltage rating of 40V. It can also handle a drain current at 25°C of up to 140A and can operate at frequencies of up to 20MHz. This makes it suitable for use in high frequency systems and as an efficient switching element in power supply designs that require high current handling capability. The IXTP140P05T also has an integrated fast recovery logo, indicating that it is capable of recovering quickly from switching events, reducing switching losses and improving system performance.

The working principle of the IXTP140P05T is simple. When gate voltage is applied (typically a voltage greater than the threshold voltage), the MOSFET is turned on and current flows from the drain to the source. When the gate voltage is applied, electrons are attracted to the gate and the channel is opened up, allowing a current to flow. The higher the gate-to-source voltage, the more electrons are attracted to the gate and the greater the current flowing through the MOSFET.

The IXTP140P05T is a much-valued single, N-Channel TrenchFET® power MOSFET that is widely used in various power conversion applications. Its unique TrenchFET® construction helps to reduce on-state resistance and increase system efficiency. It can handle up to 140A of drain current and can operate at frequencies of up to 20MHz. Its integrated fast recovery logo also allows for faster switching operations and improved system performance. The IXTP140P05T is a valuable power MOSFET solution for many power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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