Allicdata Part #: | IRFD020PBF-ND |
Manufacturer Part#: |
IRFD020PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 2.4A 4-DIP |
More Detail: | N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-DIP... |
DataSheet: | IRFD020PBF Datasheet/PDF |
Quantity: | 1337 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFD020PBF is a type of MOSFET (Metal-Oxide Semiconductor Field-effect Transistor). It has been widely used for thermionic, joule heating, electrical, magnetic, and radio frequency (RF) applications. In this article, we will discuss the application field and working principle of the IRFD020PBF.
The IRFD020PBF has a small-signal capability, making it suitable for a wide range of applications. It is effective in power switching, speed control, and voltage regulation applications, and it has low on-resistance and high load capacity. This makes it suitable for use in DC-DC converters, motor controllers, and other power control equipment. It is also suitable for RF applications, such as RF amplifiers, switches, and antennas.
The IRFD020PBF is also capable of operating at high temperatures. It is rated for operation up to 175ºC, and is offered in the industry standard ‘TO-220’ package, which makes it compatible with other components. This makes it suitable for use in automotive and harsh environments.
The IRFD020PBF MOSFET works like other field effect transistors. A gate voltage is applied to the gate that controls the current through the channel between the drain and source. When the gate voltage is high, the channel is ‘open’ and a current flows between the source and drain. When the gate voltage is low, the channel is ‘closed’ and no current can flow. This allows the IRFD020PBF to be used as a switch, controlling the flow of current to other components.
The IRFD020PBF also has low ‘gate-source capacitance’, which is important in RF applications. This means that the MOSFET will have a small simultaneous transition time, making it suitable for use in high frequency applications. It can also be used in low frequency applications, as it is able to handle low levels of current.
The IRFD020PBF is an ideal device for a wide range of applications, from power control to RF applications. Its low on-resistance and high load capacity make it an excellent choice for power control applications, while its low gate-source capacitance make it suitable for RF applications. The device is also rated for operation up to 175ºC, and is offered in a ‘TO-220’ package, making it compatible with other components.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IRFD213 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 450MA 4-... |
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IRFDC20PBF | Vishay Silic... | 0.78 $ | 1000 | MOSFET N-CH 600V 320MA 4-... |
IRFD9220 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.56A 4-... |
IRFD110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1A 4-DIP... |
IRFD9113 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 600MA 4-D... |
IRFD210 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 600MA 4-... |
IRFD9110 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 0.7A 4-D... |
IRFD9120 | Vishay Silic... | -- | 300 | MOSFET P-CH 100V 1A 4-DIP... |
IRFD120 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
IRFD220 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 800MA 4-... |
IRFD9210 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.4A 4-D... |
IRFD010 | Vishay Silic... | -- | 1000 | MOSFET N-CH 50V 1.7A 4-DI... |
IRFD014 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 1.7A 4-DI... |
IRFD310 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 400V 350MA 4-... |
IRFD320 | Vishay Silic... | -- | 1000 | MOSFET N-CH 400V 490MA 4-... |
IRFD420 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 370MA 4-... |
IRFD9014 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.1A 4-DI... |
IRFD9020 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A 4-DI... |
IRFD9024 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A 4-DI... |
IRFDC20 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 320MA 4-... |
IRFD010PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 50V 1.7A 4-DI... |
IRFD9123PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 1A HEXDI... |
IRFD014PBF | Vishay Silic... | -- | 3099 | MOSFET N-CH 60V 1.7A 4-DI... |
IRFD120PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.3A 4-D... |
IRFD9120PBF | Vishay Silic... | -- | 2138 | MOSFET P-CH 100V 1A 4-DIP... |
IRFD310PBF | Vishay Silic... | -- | 1416 | MOSFET N-CH 400V 350MA 4-... |
IRFD420PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 370MA 4-... |
IRFD9220PBF | Vishay Silic... | -- | 999 | MOSFET P-CH 200V 0.56A 4-... |
IRFD123PBF | Vishay Silic... | 1.11 $ | 562 | MOSFET N-CH 100V 1.3A 4-D... |
IRFD220PBF | Vishay Silic... | -- | 2366 | MOSFET N-CH 200V 800MA 4-... |
IRFD024PBF | Vishay Silic... | 1.04 $ | 6253 | MOSFET N-CH 60V 2.5A 4-DI... |
IRFD9010PBF | Vishay Silic... | 1.04 $ | 3679 | MOSFET P-CH 50V 1.1A 4-DI... |
IRFD9020PBF | Vishay Silic... | -- | 884 | MOSFET P-CH 60V 1.6A 4-DI... |
IRFD020PBF | Vishay Silic... | -- | 1337 | MOSFET N-CH 50V 2.4A 4-DI... |
IRFD9024PBF | Vishay Silic... | -- | 2786 | MOSFET P-CH 60V 1.6A 4-DI... |
IRFD9110PBF | Vishay Silic... | -- | 502 | MOSFET P-CH 100V 0.7A 4-D... |
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