IRFD020PBF Allicdata Electronics
Allicdata Part #:

IRFD020PBF-ND

Manufacturer Part#:

IRFD020PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 50V 2.4A 4-DIP
More Detail: N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-DIP...
DataSheet: IRFD020PBF datasheetIRFD020PBF Datasheet/PDF
Quantity: 1337
Stock 1337Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFD020PBF is a type of MOSFET (Metal-Oxide Semiconductor Field-effect Transistor). It has been widely used for thermionic, joule heating, electrical, magnetic, and radio frequency (RF) applications. In this article, we will discuss the application field and working principle of the IRFD020PBF.

The IRFD020PBF has a small-signal capability, making it suitable for a wide range of applications. It is effective in power switching, speed control, and voltage regulation applications, and it has low on-resistance and high load capacity. This makes it suitable for use in DC-DC converters, motor controllers, and other power control equipment. It is also suitable for RF applications, such as RF amplifiers, switches, and antennas.

The IRFD020PBF is also capable of operating at high temperatures. It is rated for operation up to 175ºC, and is offered in the industry standard ‘TO-220’ package, which makes it compatible with other components. This makes it suitable for use in automotive and harsh environments.

The IRFD020PBF MOSFET works like other field effect transistors. A gate voltage is applied to the gate that controls the current through the channel between the drain and source. When the gate voltage is high, the channel is ‘open’ and a current flows between the source and drain. When the gate voltage is low, the channel is ‘closed’ and no current can flow. This allows the IRFD020PBF to be used as a switch, controlling the flow of current to other components.

The IRFD020PBF also has low ‘gate-source capacitance’, which is important in RF applications. This means that the MOSFET will have a small simultaneous transition time, making it suitable for use in high frequency applications. It can also be used in low frequency applications, as it is able to handle low levels of current.

The IRFD020PBF is an ideal device for a wide range of applications, from power control to RF applications. Its low on-resistance and high load capacity make it an excellent choice for power control applications, while its low gate-source capacitance make it suitable for RF applications. The device is also rated for operation up to 175ºC, and is offered in a ‘TO-220’ package, making it compatible with other components.

The specific data is subject to PDF, and the above content is for reference

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