| Allicdata Part #: | IXTP48P05T-ND |
| Manufacturer Part#: |
IXTP48P05T |
| Price: | $ 1.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 50V 48A TO-220 |
| More Detail: | P-Channel 50V 48A (Tc) 150W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP48P05T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.87000 |
| 10 +: | $ 1.81390 |
| 100 +: | $ 1.77650 |
| 1000 +: | $ 1.73910 |
| 10000 +: | $ 1.68300 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3660pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP48P05T is a discrete power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high power and high frequency power supply applications. It features a very low maximum on-resistance at the cost of a much higher maximum gate-drain voltage.
MOSFETs are useful in a variety of power switching components, especially in high-voltage and high-current applications due to their low switching power loss. This makes them ideal for high-power switching applications such as motor drive and solenoid control in motor vehicles as well as other power conversion and control applications.
The IXTP48P05T comes in two separate packages, one with a conventional package and the other with a very low-profile package. This makes it suitable for applications with limited board space. It also features a wide drain - source voltage range (14V to 40V) with a maximum drain - source voltage of 48V, a maximum drain current of 8A and an excellent safe ambient temperature range of -55°C to 150°C.
The IXTP48P05T uses a depletion-mode MOSFET structure, which allows it to be used as both a p-channel and n-channel MOSFET. It is capable of operating at frequencies up to 2MHz, making it ideal for high frequency switching applications. Its low on-resistance also makes it an excellent choice for high-power, high-current switching applications, as it reduces the power loss associated with switching large loads.
The IXTP48P05T\'s gate-source voltage range is 4V to 8V, making it compatible with many popular logic technologies such as LED and signal line drivers. It is further protected by an integrated Schottky diode, providing excellent protection against current spikes.
The IXTP48P05T is suitable for many high power applications ranging from motor drive and switching power supplies, to high power industrial and consumer applications. Its wide voltage range, low on-resistance and high frequency capabilities make it an ideal choice for many demanding applications.
The specific data is subject to PDF, and the above content is for reference
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