IRFU9010PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.1nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	500 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.3A (Tc)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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<p>The IRFU9010PBF is a single-stage enhancement mode enhancement mode MOSFET. It is a power transistor composed of four vertical N-channel MOS cells, each with its own source and drain. This essential device can be found in applications such as high-side switch and low-side switch.</p><p>The IRFU9010PBF is designed for high current and low on-resistance applications. It typically offers a maximum drain current of 2.5A and a maximum on-resistance of just 0.22 Ohm. It operates with a drain-source voltage of up to 27V and a gate-source voltage of up to 20V.</p><p>This MOSFET can be used in a variety of applications, such as a high-side switch, a low-side switch, switching a current-carrying resistor, and other applications requiring gate drive. It can be used as a power switch to control the switching of large currents, as well as to control the speed of DC motor and other medium motor applications. It is also suitable for use as an amplifier, inverter, and in circuit protection systems.</p><p>The IRFU9010PBF’s working principle is based on the basic operation of the MOSFET FET. When the gate terminal is given a positive pulse or input signal, a channel is formed between the source and drain terminals. This makes the channel conductive and allows current to flow from the source to the drain. The channel is turned off again when the gate is charged to bring the device back to its non-charging state.</p><p>In addition to the above applications, the IRFU9010PBF can be used in applications such as audio amplifiers and power lines. It is also ideal for applications requiring high current and low on-resistance switching performance, such as demand switching, DC-DC power converters, power semiconductor relays, and other high-frequency switching applications.</p><p>In conclusion, the IRFU9010PBF is a single-stage enhancement mode MOSFET that is designed for high current and low on-resistance applications. It is suitable for applications such as high-side switches, low-side switches, switching a current-carrying resistor, and other gate drive applications. Its working principle is based on the basic operation of the MOSFET FET, which allows a channel to be formed between the source and drain terminals when the gate is given a positive pulse or input signal. It is also suitable for use as an amplifier, inverter, and in circuit protection systems.</p>

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