Allicdata Part #: | IRFD010PBF-ND |
Manufacturer Part#: |
IRFD010PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 1.7A 4-DIP |
More Detail: | N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-DIP... |
DataSheet: | IRFD010PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 4-DIP (0.300", 7.62mm) |
Supplier Device Package: | 4-DIP, Hexdip, HVMDIP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 860mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFD010PBF is a type of transistors, FETs, MOSFETs, and a single one in particular. It is a MOSFET that is a monolithic integrated circuit that contains an isolated gate field-effect transistor (FET).
IRFD010PBF is common choice for many applications such as driver, amplifier, and switch. This transistor can handle up to 100V and can deliver current up to 7A. Since its body dimensions are very small (3.3mm x 3.3mm), it is suitable for high-density assembly. Furthermore, with the specified breakdown voltage (BVdss) of 60V and drain-source on-state resistance (Rds(on)) of 0.015Ω, IRFD010PBF is also ideal for low voltage and high current applications.
The working principle of IRFD010PBF is that, when the transistor is opened, virtually no current flows between the drain and source, since its is an Insulated-Gate Field Effect Transistor (IGFET). The gate acts as an insulator between the source and drain. As a result, the voltage between the source and drain will be zero, so no current will be able to flow. If a voltage is applied to the gate, it will be attracted to the substrate. The increased charge will induce an electric field between the source and drain. This creates an active channel between the two that allows current to flow. By controlling the voltage applied to the gate, the amount of current that can flow between the source and drain can be controlled.
IRFD010PBF has many beneficial characteristics beyond its electrical performance, such as thermal immunity, packaging and layout flexibility, low power consumption, and small size. Additionally, due to its robustness, IRFD010PBF has a long and reliable duration of operation.
IRFD010PBF is suitable for various applications. It is excellent for applications that require high performance and power efficiency. It is frequently used in power supplies, switching power converters, electronic motor controls and audio amplifiers, among others. It can also be used in automotive lighting andmeasurement systems, in addition to safety circuits and immunization systems.
In conclusion, IRFD010PBF is a versatile and reliable single-channel MOSFET that is suitable for many applications. With its wide range of operational characteristics and its small size, IRFD010PBF offers performance, power efficiency, and robustness that make it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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