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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-6549-2-ND	STB200NF04L	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL520NS-ND	IRL520NS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF3709LPBF-ND	IRF3709LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
FDS7064SN3TR-ND	FDS7064SN3	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V Power Dissipation (Max): 3.13W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IPI80N06S3L-08I N-ND	IPI80N06S3L-08	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 43A, 10V Vgs(th) (Max) @ Id: 2.2V @ 55A Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 6475pF @ 25V Power Dissipation (Max): 105W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
NTMFS4854NST1G- ND	NTMFS4854NST1G	ON Semiconductor	View more Series: SENSEFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 15.2A (Ta), 149A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.2V, 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 85nC @ 11.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 4830pF @ 12V Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO-8FL Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IPD70N03S4L04AT MA1TR-ND	IPD70N03S4L04AT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	--
SIRA84DP-T1-GE3 TR-ND	SIRA84DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Power Dissipation (Max): 34.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	3000 Order	3000+: $0.139
AUIRLZ24NS-ND	AUIRLZ24NS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.5383
SI1012-TPMSTR-N D	SI1012-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 2.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V Power Dissipation (Max): 150mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	3000 Order	3000+: $0.058
IRL3103D1STRL-N D	IRL3103D1STRL	Infineon Technologies	View more Series: FETKY Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
HUFA76407D3-ND	HUFA76407D3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
NTZS3151PT1GOST R-ND	NTZS3151PT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V Power Dissipation (Max): 170mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	4000 Order	--
IRLR3110ZPBF-ND	IRLR3110ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1009 Order	1+: $1.2663 10+: $1.1447 100+: $0.9201 500+: $0.7156 1000+: $0.5929
568-7491-5-ND	BUK652R1-30C,12 7	NXP USA Inc	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 168nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 10918pF @ 25V Power Dissipation (Max): 263W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IPI80P03P4L07AK SA1-ND	IPI80P03P4L07AK SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 130A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
AUIRLR2905-ND	AUIRLR2905	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
AUIRL1404ZSTRL- ND	AUIRL1404ZSTRL	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.305
IRLR3303PBFTR-N D	IRLR3303TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRL2505STRRPBF- ND	IRL2505STRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
DMN2004TK-7DITR -ND	DMN2004TK-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	6000 Order	--
SIDR390DP-T1-GE 3TR-ND	SIDR390DP-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 69.9A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 10180pF @ 15V Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8DC Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.7857
296-24251-2-ND	CSD16406Q3	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 19A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12.5V Power Dissipation (Max): 2.7W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	1000 Order	--
BSH105,235-ND	BSH105,235	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.05A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 200 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 570mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 16V Power Dissipation (Max): 417mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	20000+: $0.0618
STB160NF3LLT4-N D	STB160NF3LLT4	STMicroelectronics	View more Series: STripFET III Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Power Dissipation (Max): 300W (Tc) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRLL2705CT-ND	IRLL2705TR	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	--
IRLZ44ZLPBF-ND	IRLZ44ZLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRLBA1304PPBF-N D	IRLBA1304PPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220 (TO-273AA) Package / Case: Super-220-3 (Straight Leads)	1000 Order	1+: $0
HUF76633S3S-ND	HUF76633S3S	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Power Dissipation (Max): 145W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRLR3410PBFTR-N D	IRLR3410TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IRLR3410	19557 Order	--
IRL3803STRRPBF- ND	IRL3803STRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
DMP2004TKDITR-N D	DMP2004TK-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	6000 Order	--
SI4668DY-T1-E3- ND	SI4668DY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1654pF @ 15V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.3449
IRF7809ATR-ND	IRF7809ATR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 16V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRLR3303TRLPBF- ND	IRLR3303TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
HUFA76413P3-ND	HUFA76413P3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 49 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
AUIRLR2905Z-ND	AUIRLR2905Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
AUIRLR3410-ND	AUIRLR3410	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
296-24250-2-ND	CSD16404Q5A	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 21A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 12.5V Power Dissipation (Max): 3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	22500 Order	--
SISA18ADN-T1-GE 3TR-ND	SISA18ADN-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 38.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	24000 Order	--

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