Allicdata Part #: | HUFA76407D3-ND |
Manufacturer Part#: |
HUFA76407D3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 12A IPAK |
More Detail: | N-Channel 60V 12A (Tc) 38W (Tc) Through Hole TO-25... |
DataSheet: | HUFA76407D3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
Series: | UltraFET™ |
Rds On (Max) @ Id, Vgs: | 92 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Single:
HUFA76407D3 is commonly used in a high power and high frequency operation. It is also capable of close proximity operation and low drain-source on-state resistance. This device has a highly reliable standard cell structure and is designed with a patented self-aligning gate structure to reduce gate-to-drain capacitance. Additionally, it is available in two packages, Sot-223 and Sot-89, with a maximum power dissipation of up to 4.0 W.
The working principle of HUFA76407D3 can be explained by looking at its operation in terms of P and N type transistors. It has both P and N type drain and source regions and is composed of two layers: one layer of P type silicon and one layer of N type silicon. The two layers are stacked on top of each other, separated by a thin insulator, and source and drain regions are formed in the N and P layers. The structure of this device allows for the application of a voltage difference between the source and drain regions. This voltage difference will then cause a current to flow from the drain to the source.
In addition to its high maximum power dissipation, the HUFA76407D3 also offers a range of other benefits. It has good thermal performance and is stable in high temperature environments. Furthermore, its low on-resistance provides improved efficiency and response time. The device also has a low gate-drain capacitance, which helps to minimize system power losses.
The HUFA76407D3 is a highly reliable MOSFET and is suitable for a range of applications. It is suitable for use in power management, motor control, and e-mobility systems. Other applications include battery management units, power inverters, AC-DC converters, and DC-DC converters. It is also widely used in solar energy systems, lighting systems and automotive applications.
The HUFA76407D3 is a reliable, high power and high frequency MOSFET that offers a range of features and benefits. It has a low on-resistance, high power dissipation, and good thermal performance. It is suitable for use in a wide range of applications including power management, motor control, and e-mobility systems.
The specific data is subject to PDF, and the above content is for reference
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