IRF7809ATR

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The IRF7809ATR is a single-performance enhancement mode enhancement field effect transistor (FET). This device offers low effective capacitance, low gate-source capacitance, and low effective gate resistance from temperatures as low as -55 C up to 150 C, making it ideal for a variety of applications including switching and power supplies.

The IRF7809ATR operates at a maximum voltage of 20 V and a maximum current of 2 A. The device has an on-state resistance of 0.34 ohm, off-state voltage of 0.7 V, and switching time of 50 ns.

This MOSFET has a drain-source breakdown voltage of 20V, allowing it to be used with a variety of operating voltages. By operating below 20 V, the device also has a lower leakage current, reducing power consumption. Additionally, this device has a gate threshold voltage of 0.75V, reducing power consumption even further.

The IRF7809ATR works by using an output transistor to bridge the gap between the source and the drain. A gate voltage is applied between the drain and source, which is then transferred to the transistor gate where it is used to control the current through the device. This allows the device to be used for switching and controlling power.

The IRF7809ATR is ideal for a variety of applications. It can be used for switching and controlling power in power supplies and other electronic devices including automotive and computing systems. Additionally, it can be used for high-side and low-side switching in applications such as load-reduced and active-high-side switches. The device is also capable of in-rush current control, providing improved system performance.

The IRF7809ATR is a reliable and efficient device, providing superior performance and efficiency. Its low capacitance, low gate-source capacitance, and low resistance make it ideal for a variety of applications, making it one of the best devices for power and switching control.

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