IRF3709LPBF Allicdata Electronics
Allicdata Part #:

IRF3709LPBF-ND

Manufacturer Part#:

IRF3709LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 90A TO-262
More Detail: N-Channel 30V 90A (Tc) 3.1W (Ta), 120W (Tc) Throug...
DataSheet: IRF3709LPBF datasheetIRF3709LPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF3709LPBF is an extremely efficient and reliable MOSFET that can handle large currents with a very small form factor. It is ideal for applications where space is limited due to its small size and low weight. As such it is frequently used in high power applications such as motor drives, power supplies, and large power amplifiers.

IRF3709LPBF is a silicon n-channel enhancement mode vertical DMOS device. It features a P-channel for low on-resistance, low noise and high speed switching. Its drain-source breakdown voltage is specified up to 100V as well as its maximum on-state drain current of 70A. It also has a low gate input capacitance of only 7pF which is ideal for high switching frequency operation. Its reverse diode is also very fast and efficient, capable of operation up to 8A at 100V.

This type of MOSFET is an ideal choice for applications requiring low on-resistance and low gate charge. It is also capable of handling large voltage differentials, which is why it is used in motor drives, power supplies, and high-power amplifiers where large spikes of voltage can occur. Its fast switching speed makes it a great choice for high-frequency applications as well.

In terms of working principle, IRF3709LPBF is an n-channel field effect transistor. It has one source, one gate, and one drain. When a voltage is applied to the gate it creates an electric field which causes the channel between the source and the drain to open up, allowing current to flow through the transistor. This is what gives the transistor its ability to modulate current flow. When no voltage is applied to the gate, the channel remains closed and current will not flow.

When used in applications such as motor drives and power supplies, the IRF3709LPBF can provide fast and efficient power control. Its low gate charge and low on-resistance offer efficient switching operation as well. It can help reduce the size of the system and increase power efficiency. This means that the device can help save energy and reduce costs for the user.

Overall, IRF3709LPBF is an extremely versatile and efficient MOSFET for a variety of applications. It is capable of providing efficient, fast and reliable power control in a variety of applications. Its small size and low weight also mean that it takes up minimal space and can fit into tight places.

The specific data is subject to PDF, and the above content is for reference

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