IRL3103D1STRL Allicdata Electronics
Allicdata Part #:

IRL3103D1STRL-ND

Manufacturer Part#:

IRL3103D1STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 64A D2PAK
More Detail: N-Channel 30V 64A (Tc) 3.1W (Ta), 89W (Tc) Surface...
DataSheet: IRL3103D1STRL datasheetIRL3103D1STRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Series: FETKY™
Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRL3103D1STRL is a vertical power MOSFET (V-MOSFET) from Texas Instrument that is specifically designed for enhanced-current and current-limited power applications. It has very low input power losses along with high peak current capability for driving a wide range of loads. It is suitable for use in smart power management, low-frequency switch mode power supplies (SMPS), industrial motor drive, and voltage regula-tion applications.

The IRL3103D1STRL is designed for use in N-Channel enhancement-mode V-MOSFETs. It features a low voltage oper-ation, low gate-charge, low ON-resistance, and low ON- and OFF-channel resistances. The device\'s high-efficiency design and its very low on-resistance enable it to deliver performance that exceeds that of other comparable MOSFETs. It also offers excellent ESD protection and thermal characteristics.

The device consists of a large metal-oxide semiconductor (MOS) structure, which has a gate layer, multiple gate-oxide layers, a drift region, and a large metal-oxide semiconductor (MOS) drain region. The large MOS structure provides the device with a higher level of robustness, low switching times, and high output current capability, which makes it ideal for use in high-power, high-frequency applications. The MOS structure also enables the device to sense a wide range of signals from different sources, such as digital and analog signals, while maintaining high reliability.

The device works by using a low voltage threshold and a high impedance transistor device to control the drain current of a power MOSFET. The V-MOSFET is connected to the gate of the device, and the gate voltage is applied to control the on/off-state of the device. When the gate voltage is increased, the MOSFET is “turned on” and the drain current is allowed to flow. When the gate voltage is decreased, the MOSFET is “turned off” and the drain current is blocked.

The IRL3103D1STRL is a very efficient, low-cost solution for a variety of power applications. Its low ON-resistance, low input power losses, and high voltage withstand capability make it a suitable choice for a wide range of industrial, automotive, and general-purpose motor control applications.

Despite its small size, the IRL3103D1STRL is a powerful and reliable device that is capable of handling high-power applications. Its robust design, low operational power losses and its low-voltage operation capabilities make it a popular choice for industrial and motor-control applications. Furthermore, the device offers excellent ESD protection and thermal characteristics, making it suitable for deployment in highly-specialized power applications.

The specific data is subject to PDF, and the above content is for reference

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