HUF76633S3S

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HUF76633S3S is a bipolar N-channel enhancement mode Field-Effect Transistor (FET). It has excellent maximum drain current and an ideal balance of low on-resistance and gate charge.

The HUF76633S3S is specifically designed to be used in low-voltage, high-current load switching applications. It can switch up to 100 volts of load current (on/off voltage) and can handle up to 120 volts of drain-source voltage in a given application.

The HUF76633S3S is built using a advanced vertical DMOS process that offers superior power-handling capability, excellent RF immunity, low on-resistance, and low gate charge. The device is fabricated using silicon-oxide surface passivation and Self-Aligning Gate (SAG) technology for improved switching performance and reliable operation.

The HUF76633S3S is primarily intended for DC-DC converters, HVAC equipment, power supplies, motor controllers, and other battery-powered or low-voltage systems.

Working Principle of HUF76633S3S

The HUF76633S3S is an N-channel MOSFET working in its enhancement mode. It works on the principle of applying a voltage to the gate of the MOSFET which increases the conductivity of the channel, thereby allowing current to flow through the drain pin. As the voltage applied to the gate is increased, the conductivity of the channel increases, thereby increasing the drain current.

When the gate voltage is greater than the threshold voltage (VGS (th)), the MOSFET will be fully turned on and the drain current is limited only by the drain source resistance (RDS (on)). When the gate voltage is below the threshold voltage, the MOSFET is turned off, and the drain current is zero. The devices also have an “off-low state,” small on resistance at low gate values, in which current will flow when the device is "off".

The HUF76633S3S has a very low threshold voltage (VGS (th)), typically between 2V-4V, and the on-resistance is typically 0.25 Ohms with a maximum of 1 Ohm. The maximum current through the MOSFET is limited to 60 Amps.

Application of HUF76633S3S

The HUF76633S3S is suitable for a variety of applications including DC-DC converters, HVAC equipment, power supplies, motor controllers, and other battery-powered or low-voltage systems. It can be used in a wide range of applications where low on-resistance, high current-handling capability, and a low threshold voltage are required.

The HUF76633S3S is also well-suited as an output switch in a wide variety of products such as chargers, power supplies, DC-DC converters, power converters, switched-mode power supplies, adjustable DC power supplies, and AC/DC converters.

In addition, the HUF76633S3S can also be used as a component in analog circuits to regulate the flow of current through certain pins. This is particularly useful in applications such as active filtering, audio amplifier circuits, or systems with complex switching schemes.

Conclusion

The HUF76633S3S is a bipolar N-channel enhancement mode FET that has a wide range of applications in battery-powered or low-voltage systems. It has excellent maximum drain current, low on-resistance, and low gate charge, making it well-suited for high-current load switching and DC-DC conversion. The device also has low threshold voltage and is suitable for an array of analog circuits.

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