Allicdata Part #: | 296-24250-2-ND |
Manufacturer Part#: |
CSD16404Q5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 81A 8-SON |
More Detail: | N-Channel 25V 21A (Ta), 81A (Tc) 3W (Ta) Surface M... |
DataSheet: | CSD16404Q5A Datasheet/PDF |
Quantity: | 22500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 81A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.1 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
Vgs (Max): | +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 12.5V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
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The CSD16404Q5A is a fast, low-voltage, low on-resistance N-Channel power field-effect transistor (FET). It is specifically designed for switching and power applications such as load switching, secondary synchronous rectification, and DC/DC conversion. This N-Channel power MOSFET offers a combination of low on-resistance and minimum gate charge that make it suitable for a variety of load switching and secondary synchronous rectification applications.
The CSD16404Q5A is composed of three main layers, the source region, gate, and drain region. Both the gate and drain are made up of a highly-doped polysilicon material, while the source is left un-doped. The gate is insulated from the source and the drain by a thin gate oxide layer. The source is connected to the drain by an N-type channel, which is surrounded by a mechanical mask. When a voltage is applied across the gate and source, the electric field created by the voltage causes current to flow through the N-Type channel. This produces a voltage drop across the channel, which results in a resistance between the source and drain terminals that is proportional to the gate to source voltage (Vgs).
The CSD16404Q5A is often used in applications where switching high current is required and where low on-resistance and low gate charge is a priority. Examples of applications where this device is used include, switching mode power supplies, LED drivers, power management units, DC/DC converters, secondary synchronous rectification and load switching applications.
Due to its low on-resistance, the device can handle large amounts of current and dissipate considerable amount of power without experiencing thermal runaway. Additionally, its low gate-charge minimizes Gate Driver requirements. This makes the device well-suited for high-frequency switching applications, where the device\'s fast switching speed is invaluable.
The CSD16404Q5A is available in a PowerPAK SO-8 package, which allows the use of higher power dissipation and improved thermal performance. In addition to its durable 8-lead SO-8 package, the device is also available in various other packages, such as the PDIP-6, the SOT-223, and the TO-252-3.
In summary, the CSD16404Q5A is a fast and compact N-Channel power FET designed for switching and power applications where low on-resistance and low gate charge are essential. Its 8-lead SO-8 package allows for higher power dissipation and improved thermal performance, while its other package options offer various other benefits. With its combination of low on-resistance and fast switching speed, the CSD16404Q5A is well suited for various applications such as switching mode power supplies, LED drivers, power management units, DC/DC converters, secondary synchronous rectification, and load switching applications.
The specific data is subject to PDF, and the above content is for reference
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