Embedded mmc flash ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SS9018HBU-ND	SS9018HBU	ON Semiconductor	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 97 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	4305 Order	1+: $0.1449 10+: $0.1203 100+: $0.0639 500+: $0.0421 1000+: $0.0286
UTV080-ND	UTV080	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Gain: 9dB ~ 10dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200C (TJ) Mounting Type: Channel, DIN Rail Mount Package / Case: 55JV Supplier Device Package: 55JV	1000 Order	25+: $160.873
NE664M04-A-ND	NE664M04-A	CEL	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 20GHz Gain: 12dB Power - Max: 735mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F Base Part Number: NE664	1000 Order	1+: $0
MS2472-ND	MS2472	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 5.6dB Power - Max: 1350W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	1000 Order	1+: $0
MT3S20P(TE12LF) TR-ND	MT3S20P(TE12L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
MRF559-ND	MRF559	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA Mounting Type: Surface Mount Package / Case: Macro-X Supplier Device Package: Macro-X	1000 Order	1+: $0
BLS3135-65,114- ND	BLS3135-65,114	NXP USA Inc	View more Packaging: Tray Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.5GHz Gain: 7dB Power - Max: 200W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200C (TJ) Mounting Type: Surface Mount Package / Case: SOT-422A Supplier Device Package: CDFM2 Base Part Number: BLS3135	1000 Order	1+: $0
0912-45-ND	0912-45	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 8dB ~ 9dB Power - Max: 225W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	1000 Order	50+: $98.5418
UTV200-ND	UTV200	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Gain: 8.5dB ~ 9.5dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV	1000 Order	1+: $0
2SC4703-T1-AZ-N D	2SC4703-T1-AZ	CEL	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	1000 Order	--
2SC5750-A-ND	2SC5750-A	CEL	View more Packaging: Strip Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343	1000 Order	1+: $0
2SC5087YTE85LFT R-ND	2SC5087YTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	1000 Order	1+: $0
MRF586-ND	MRF586	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	79 Order	1+: $164.17
NE68039-T1-R46- A-ND	NE68039-T1-R46- A	CEL	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA	1000 Order	1+: $0
MRF559T-ND	MRF559T	Microsemi Corporation	View more Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Gain: 9.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Current - Collector (Ic) (Max): 150mA	1000 Order	1+: $0
2N5109CS-ND	2N5109	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	4866 Order	--
1086-20994-ND	2N4957UB	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	1000 Order	100+: $19.3456
MS1336-ND	MS1336	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	1000 Order	75+: $45.9275
MS1003-ND	MS1003	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 136MHz ~ 175MHz Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	1000 Order	1+: $0
2224-6L-ND	2224-6L	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.4GHz Gain: 7dB Power - Max: 22W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	1000 Order	1+: $0
SD1444-ND	SD1444	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 450MHz ~ 512MHz Gain: 8dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	1000 Order	1+: $0
MS2203-ND	MS2203	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	1000 Order	1+: $0
BFG590,215-ND	BFG590,215	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	1000 Order	1+: $0
1086-20992-ND	JANTX2N4957	Microsemi Corporation	View more Packaging: Bulk Part Status: Active Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	1000 Order	100+: $24.5389
AT-30511-BLKG-N D	AT-30511-BLKG	Broadcom Limited	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 14dB ~ 16dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	1000 Order	1+: $0
NE462M02-AZ-ND	NE462M02-AZ	CEL	View more Packaging: Strip Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: 10dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA	1000 Order	1+: $0
NE68518-A-ND	NE68518-A	CEL	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	1000 Order	1+: $0
LZ1418E100R,114 -ND	LZ1418E100R,114	Ampleon USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.6GHz Power - Max: 45W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 3V Current - Collector (Ic) (Max): 4A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-443A Supplier Device Package: CDFM2	1000 Order	1+: $0
2SC5509-A-ND	2SC5509-A	CEL	View more Packaging: Strip Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 190mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F	1000 Order	1+: $0
2731-200P-ND	2731-200P	Microsemi Corporation	View more Part Status: Obsolete Frequency - Transition: 2.7GHz ~ 3.1GHz Gain: 8.7dB Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $0
2SC3357-T1-ATR- ND	2SC3357-T1-A	CEL	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 10dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	1000 Order	1+: $0
MS2473-ND	MS2473	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	1000 Order	1+: $0
MSC1400M-ND	MSC1400M	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.5dB Power - Max: 1000W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	1000 Order	1+: $0
2SC5606-A-ND	2SC5606-A	CEL	View more Packaging: Strip Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 12.5dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523	1000 Order	1+: $0
MRF555GT-ND	MRF555GT	Microsemi Corporation	View more Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 470MHz Gain: 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA	1000 Order	1+: $0
MRF544-ND	MRF544	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.5GHz Gain: 13.5dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Mounting Type: Through Hole Package / Case: TO-39 Supplier Device Package: TO-39	1000 Order	1+: $0
MS2554-ND	MS2554	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	1000 Order	1+: $0
MSC1090M-ND	MSC1090M	Microsemi Corporation	View more Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Gain: 8.4dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 5.52A Operating Temperature: 200C Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	1000 Order	1+: $0
568-12028-2-ND	BFU768F,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz Gain: 13.1dB Power - Max: 220mW DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	1000 Order	3000+: $0.0962 6000+: $0.09 15000+: $0.0838 30000+: $0.0827
NE68830-A-ND	NE68830-A	CEL	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	1000 Order	1+: $0

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