NE68830-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NE68830-A is a high power transistor that is used in radio frequency (RF) applications. It has a very small size and is ideal for applications that require high gain at low power consumption. The NE68830-A is a bipolar junction transistor (BJT) that is suitable for use in RF applications such as RF amplifiers and oscillators.

The NE68830-A is an NPN type transistor, meaning it has three terminals - the emitter, the collector and the base. When current passes through the collector and base of the transistor, it turns on and amplifies the incoming current. The NE68830-A provides high gains of up to 40 at Vce of 5V and the collector current of 500mA. This makes it ideal for high power amplification applications.

The NE68830-A can work in both linear and switch mode operations. In linear mode operation, the transistor is used for applications such as amplifiers, oscillators, filters and mixers. In switch mode operation, it is used as a switch, typically in high power, high frequency applications.

The NE68830-A has a low noise figure and good temperature stability. It also has a good power gain vs. power consumption ratio, making it suitable for a wide range of applications. Its small size makes it ideal for applications requiring a small form factor.

In summary, the NE68830-A is a high power transistor ideal for RF applications such as amplifiers, oscillators and switches. Its small size and high gain make it ideal for a wide range of applications. Its good power gain vs. power consumption ratio and temperature stability make it a great choice for high power applications.

The specific data is subject to PDF, and the above content is for reference