Embedded power electronics for automotive applications

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FQPF9N50C-ND	FQPF9N50C	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--
FQP58N08-ND	FQP58N08	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 57.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24 mOhm @ 28.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 146W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
FQP7N60-ND	FQP7N60	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Power Dissipation (Max): 142W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	--
BSP315PXTINTR-N D	BSP315PE6327T	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 1.17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V Vgs(th) (Max) @ Id: 2V @ 160A Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
IPF04N03LAG-ND	IPF04N03LA G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
SPI80N03S2-03-N D	SPI80N03S2-03	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
SPN03N60S5-ND	SPN03N60S5	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 135A Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	--
SPP70N10LIN-ND	SPP70N10L	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	--
MTB50P03HDLGOS- ND	MTB50P03HDLG	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
NTMFS4120NT3G-N D	NTMFS4120NT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 24V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1+: $0
NTMFS4707NT1G-N D	NTMFS4707NT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 24V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	--
SI1305DL-T1-E3T R-ND	SI1305DL-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 290mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	1000 Order	--
SI1472DH-T1-E3T R-ND	SI1472DH-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
SI3441BDV-T1-E3 TR-ND	SI3441BDV-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 860mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
HUF75344A3-ND	HUF75344A3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 208nC @ 20V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4855pF @ 25V Power Dissipation (Max): 288.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
2N7002KT3G-ND	2N7002KT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IRF2903ZSPBF-ND	IRF2903ZSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V Power Dissipation (Max): 231W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRLR3802TRLPBF- ND	IRLR3802TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 6V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NTB5411NT4G-ND	NTB5411NT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power Dissipation (Max): 166W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
SIB419DK-T1-GE3 TR-ND	SIB419DK-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-75-6L Single Package / Case: PowerPAK SC-75-6L	1000 Order	1+: $0
IRF6720S2TR1PBF TR-ND	IRF6720S2TR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V Power Dissipation (Max): 1.7W (Ta), 17W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET S1 Package / Case: DirectFET Isometric S1	1000 Order	1+: $0
DMS2220LFWDITR- ND	DMS2220LFW-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3020 (3x2) Package / Case: 8-VDFN Exposed Pad	1000 Order	--
SFP9Z24-ND	SFP9Z24	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 49W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
2SJ610(TE16L1,N Q)-ND	2SJ610(TE16L1,N Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V Power Dissipation (Max): 20W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TPCA8025(TE12L, Q,M-ND	TPCA8025(TE12L, Q,M	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
BSS209PWL6327-N D	BSS209PW L6327	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 580mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.5A Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	1000 Order	--
BSS214NL6327HTS A1TR-ND	BSS214NL6327HTS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
NTR4171PT3G-ND	NTR4171PT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Power Dissipation (Max): 480mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
TPCC8005-H(TE12 LQMTR-ND	TPCC8005-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.3V @ 500A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
IPI80N04S3H4AKS A1-ND	IPI80N04S3H4AKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 65A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
785-1186-5-ND	AOT3N60	Alpha & Omega Semiconductor Inc.	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	--
785-1200-2-ND	AO4452	Alpha & Omega Semiconductor Inc.	View more Series: SDMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	3 Order	--
785-1230-2-ND	AON6450	Alpha & Omega Semiconductor Inc.	View more Series: SDMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	1000 Order	--
IRF7700TRPBFTR- ND	IRF7700TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	1000 Order	--
AUIRLR2703-ND	AUIRLR2703	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SI3441BDV-T1-GE 3-ND	SI3441BDV-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 860mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	1+: $0
SI5481DU-T1-GE3 -ND	SI5481DU-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK ChipFet Single Package / Case: PowerPAK ChipFET Single	1000 Order	1+: $0
IRFH5215TR2PBFC T-ND	IRFH5215TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 5A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 58 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 50V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	1000 Order	1+: $0
NTMFS4825NFET3G OSTR-ND	NTMFS4825NFET3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17A (Ta), 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V Power Dissipation (Max): 950mW (Ta), 96.2W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1+: $0
ATP216-TL-H-ND	ATP216-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 23 mOhm @ 18A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 20V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	1000 Order	--

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