FQPF9N50C

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	44W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1030pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	800 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The FQPF9N50C is a commonly used field effect transistor (FET), or specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single transistor, meaning that it contains only one gate as opposed to two, which results in fewer applications but better performance. It has a drain-source breakdown voltage of 500V, which makes it ideal for applications where power supply is an issue.The FQPF9N50C is mainly used in electronic circuitry that requires control of electrical current. As a power switch, the FQPF9N50C turns on the current when the gate voltage is at its threshold voltage, and turns it off when it is below the threshold. This process is known as voltage-controlled current.The FQPF9N50C has several properties that make it useful for certain applications. It has a high current rating, with a maximum drain-source current of 9A, which is higher than most other transistors, making it a popular choice when dealing with heavy-load current conditions. It also has a low threshold voltage, which means it will turn on at a lower gate voltage compared to other transistors.In addition, the FQPF9N50C is commonly used in switching mode power supplies, as the low on-resistance of the device makes it an ideal switch for these applications. It is also used in amplifier circuits, as the device has a high gain bandwidth product, making it ideal for applications where power gain is an issue.The working principle of the FQPF9N50C is relatively straightforward. When the gate voltage is at its threshold, the transistor is turned on and allows current to flow from the drain to the source. As the gate voltage increases, the on-resistance decreases, leading to a higher current. Conversely, when the gate voltage is less than the threshold voltage, the on-resistance increases, and the current is blocked.Although the FQPF9N50C is an excellent device for certain applications, it is not suitable for every application. It is important to consider the power supply voltage and the current requirements when choosing a transistor, as these factors will ultimately determine the suitability of the transistor for the application.Overall, the FQPF9N50C is a useful device for a variety of applications, due to its high current rating, low threshold voltage, and high gain bandwidth product. Its voltage-controlled current and on-resistance help to make it one of the most popular FETs, and it is thus a key component of many electronic circuits.

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