SI1472DH-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1472DH-T1-E3TR-ND

Manufacturer Part#:

SI1472DH-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 5.6A SC70-6
More Detail: N-Channel 30V 5.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surfa...
DataSheet: SI1472DH-T1-E3 datasheetSI1472DH-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1472DH-T1-E3 is a single, N-Channel Junction Field-Effect Transistor (N-Channel JFET). This device is specifically designed as a low noise, high input impedance enhancement mode Field-Effect Transistor (FET). The N-Channel JFET is a p–n–p–n structure designed to provide very high input impedance, low noise values and excellent voltage gain necessary for the construction of high performance amplifier circuits.

The device is capable of supplying more than 1W to the load and is especially suited for audio and video amplifier applications. It has an extremely low noise characteristic and a high input impedance that makes it a popular choice for designing reliable audio preamps, audio and video amplifiers, and also for general purpose sound equipment.

The SI1472DH-T1-E3 is available in a surface mount package and is easily integrated into any design. The device is ideal for a wide range of applications due to its low power consumption and its wide range of operating temperatures.

The working principle of the SI1472DH-T1-E3 is based on the Gate Effect, which is the change in the electric field produced across the output when a small voltage is applied to the gate. The device is composed of an N-channel junction, which is the substance through which electrons move, the source, which is a negative voltage, and the gate, which is connected to the output voltage. When an input voltage is applied to the gate, it controls the current flows from the source to the load.

In order to reduce the noise when the device is in operation, the N-channel JFET has an additional collector terminal (Gate-Guard) to reduce the noise by controlling the amount of current flowing in the drain. This helps to reduce the amount of external noise entering the circuit and thus improve the performance of the amplifier.

The SI1472DH-T1-E3 is ideal for use in a wide range of applications, especially in high-frequency analog signal processing and in telecommunication systems. It is also frequently used in medical imaging and industrial control applications due to its low power consumption and its high input impedance.

The SI1472DH-T1-E3 is a reliable, high-performance device and is widely used in applications wherein high quality audio and video signals are required. Its low noise characteristics and high input impedance make it appropriate for constructing sophisticated amplifier systems.

The specific data is subject to PDF, and the above content is for reference

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