SI5481DU-T1-GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® ChipFET™ Single
Supplier Device Package:	PowerPAK® ChipFet Single
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 17.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1610pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	22 mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI5481DU-T1-GE3 is a silicon low power single N-channel MOSFET (metal oxide semiconductor field-effect transistor) that is manufactured by Silicon Laboratories. This device has a gate voltage range of -10V to 30V, and drain-source resistance of 240mΩ. It has a low threshold voltage of 1.0V and high transconductance of 0.2mS, making it suitable for a variety of applications. It is an excellent choice for applications requiring a low power consumption and fast switching applications.

Applications

The SI5481DU-T1-GE3 is designed for use in a range of digital and analog signal processing applications. These include switching power supplies, RF power amplifiers, and low voltage power management. It can also be used in a variety of low to medium density automotive integrated circuits, as well as high luminosity LED lighting and other high power LED applications.Due to its low power consumption and fast switching capabilities, the SI5481DU-T1-GE3 is an excellent choice for any application requiring low power and fast switching. Its wide gate voltage range makes it ideal for use in high density integrated circuits and high power LED lighting applications.

Working Principle

A field-effect transistor (FET) operates based on the principle of modulating an electric field in order to control the current flow. The SI5481DU-T1-GE3 is an N-channel MOSFET which is able to carry more current than other types of FETs due to its voltage breakdown capability.The N-channel MOSFET operates as a voltage-controlled switch. When a positive voltage is applied to the gate of the transistor, the current is allowed to flow through. When the voltage is turned off, the current is not allowed to flow. This makes the N-channel MOSFET an ideal choice for applications requiring fast switching and low power consumption.The SI5481DU-T1-GE3 also has a low threshold voltage of 1.0V, which allows it to remain in an "on" state for lower voltages. This is especially useful for applications that require precision control of switching operations.

Conclusion

The SI5481DU-T1-GE3 is a low power single N-channel MOSFET manufactured by Silicon Laboratories. Its low power consumption and fast switching capabilities make it ideal for a variety of applications. Its wide gate voltage range and low threshold voltage makes it suitable for use in high density integrated circuits and high power LED lighting applications. Finally, its voltage breakdown capability makes it capable of carrying more current than other types of FETs.

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